参数资料
型号: NTE5476
厂商: NTE Electronics, Inc.
英文描述: Silicon Controlled Rectifier (SCR) 5 Amp
中文描述: 可控硅(晶闸管)5安培
文件页数: 1/2页
文件大小: 21K
代理商: NTE5476
NTE5470 thru 5476
Silicon Controlled Rectifier (SCR)
5 Amp
Description:
The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type
stud mount package suitable for industrial and consumer applications.
Features:
Uniform Low–Level Noise–Immune Gate Triggering
Low Forward “ON” Voltage
High Surge–Current Capability
Absolute Maximum Ratings:
(Apply over operating temperature range unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
DRM
, V
RRM
NTE5470
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5471
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5472
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5473
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5474
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5475
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5476
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current RMS, I
T
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Surge Current (One Cycle, 60Hz, T
J
= –40
°
to +100
°
C), I
TSM
Circuit Fusing (T
J
= –40
°
to +100
°
C, t
8.3ms), I
2
t
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage (Note 2), V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stud Torque
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
100V
200V
300V
400V
500V
600V
8A
100A
. . . . . . . . . . . . . .
40A
2
sec
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5W
0.5W
2A
10V
–40
°
to +100
°
C
–40
°
to +150
°
C
2.5
°
C/W
15 in. lb.
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
negative potential applied to the anode.
相关PDF资料
PDF描述
NTE5480 Silicon Controlled Rectifier (SCR) 8 Amp
NTE5487 Silicon Controlled Rectifier (SCR) 8 Amp
NTE5481 Silicon Controlled Rectifier (SCR) 8 Amp
NTE5482 Silicon Controlled Rectifier (SCR) 8 Amp
NTE5483 Silicon Controlled Rectifier (SCR) 8 Amp
相关代理商/技术参数
参数描述
NTE548 制造商:NTE Electronics 功能描述:RECTIFIER - 12KV HIGH VOLTAGE MICROVAVE OVEN 制造商:NTE Electronics 功能描述:SCR THYRISTOR 12KV 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 12KV 制造商:NTE Electronics 功能描述:R-SI-MICRO OVEN 12KV 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 12KV; Diode Type:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:12kV; Forward Current If(AV):750mA; Forward Voltage VF Max:14V; Operating Temperature Min:-20C; Operating Temperature Max:135C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Diode 12KV 0.75A 2-Pin
NTE5480 制造商:NTE Electronics 功能描述:SCR-25VRM 8A 制造商:NTE Electronics 功能描述:Thyristor SCR 25V 100A 3-Pin TO-64
NTE5481 制造商:NTE Electronics 功能描述:Thyristor SCR 50V 100A 3-Pin TO-64
NTE5482 制造商:NTE Electronics 功能描述:G/P SCR 制造商:NTE Electronics 功能描述:Thyristor SCR 100V 100A 3-Pin TO-64
NTE5483 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER2 制造商:NTE Electronics 功能描述:THYRISTOR, SCR, 8A, 200V, TO-64 制造商:NTE Electronics 功能描述:SCR-200 VRM8.0 A 制造商:NTE Electronics 功能描述:THYRISTOR, SCR, 8A, 200V, TO-64; Peak Repetitive Off-State Voltage, Vdrm:200V; Gate Trigger Current Max, Igt:30mA; On State RMS Current IT(rms):8A; Holding Current Max Ih:30mA; Gate Trigger Voltage Max Vgt:1.5V; Thyristor Case:TO-64 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 200V 100A 3-Pin TO-64