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参数资料
| 型号： | NTE5476 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Controlled Rectifier (SCR) 5 Amp |
| 中文描述： | 可控硅（晶闸管）5安培 |
| 文件页数： | 2/2页 |
| 文件大小： | 21K |
| 代理商： | NTE5476 |
Electrical Characteristics:
(T
C
= +25
°
C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
mA
Peak Forward or Reverse Blocking Current
I
DRM
,
I
RRM
Rated V
DRM
or V
RRM
,
Gate Open
T
J
= +25
°
C
T
J
= +100
°
C
–
–
10
–
–
2
Gate Trigger Current, Continuous DC
I
GT
V
D
= 7V, R
L
= 100
,
Note 3
–
10
30
mA
T
C
=
–
40
°
C
–
–
60
mA
Gate Trigger Voltage, Continuous DC
V
GT
V
D
= 7V, R
L
= 100
–
0.75
1.5
V
T
C
=
–
40
°
C
T
J
= +100
°
C
–
–
2.5
V
0.2
–
–
V
Forward
“
ON
”
Voltage
v
TM
I
H
I
TM
= 15.7A, Note 4
V
D
= 7V, Gate Open
–
1.4
2.0
V
Holding Current
–
10
30
mA
T
C
=
–
40
°
C
–
–
60
mA
μ
s
μ
s
Turn
–
On Time (t
d
+ t
r
)
Turn
–
Off Time
t
on
t
off
I
G
= 20mA, I
F
= 5A, V
D
= Rated V
DRM
I
F
= 5A, I
R
= 5A,
V
D
= Rated V
DRM
,
dv/dt = 30V/
μ
s
Gate Open, T
J
= +100
°
C,
V
D
= Rated V
DRM
–
1
–
–
15
–
T
J
= +100
°
C
–
25
–
μ
s
Forward Voltage Application Rate
(Exponential)
dv/dt
–
50
–
V/
μ
s
Note 3. For optimum operation, i.e. faster turn
–
on, lower switching losses, best di/dt capability,
recommended I
GT
= 200mA minimum.
Note 4. Pulsed, 1ms Max, Duty Cycle
≤
1%.
.125 (3.17) Max
.431
(10.98
Max
.855
(21.7)
Max
.453
(111.5)
Max
10
–
32 UNF
–
2A
Anode
Cathode
Gate
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