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参数资料
| 型号： | NTE63 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Gain, Low Noise Amp |
| 中文描述： | 硅NPN晶体管高增益，低噪声放大器 |
| 文件页数： | 2/2页 |
| 文件大小： | 22K |
| 代理商： | NTE63 |
Electrical Characteristics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
Current Gain
–
Bandwidth Product
h
FE
I
C
= 30mA, V
CE
= 10V
30
–
200
f
T
I
C
= 30mA, V
CE
= 10V,
f = 1GHz
V
CB
= 10V, I
E
= 0, f = 1MHz
–
5.0
–
GHz
Collector
–
Base Capacitance
Functional Tests
Noise Figure
C
cb
–
0.6
1.0
pF
NF
MIN
I
C
= 5mA, V
CE
= 10V, f = 1GHz
I
C
= 5mA, V
CE
= 10V, f = 2GHz
I
C
= 5mA, V
CE
= 10V, f = 1GHz
I
C
= 5mA, V
CE
= 10V, f = 2GHz
I
C
= 30mA, V
CE
= 10V, f = 1GHz
I
C
= 30mA, V
CE
= 10V, f = 2GHz
–
–
–
–
–
–
2.5
4.0
10
6
12.5
7.5
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
Power Gain at Optimum Noise Figure
G
NF
Maximum Available Power Gain
(Note 1)
G
max
Note1.G
max
= |S
21
|
2
/ (I
–
|S
11
|
2
) (I
–
|S
22
|
2
)
.325
(8.27)
Max
.770
(19.5)
Max
.190
(4.83)
Dia
.075 (1.9) Min
.036 (0.92)
E
E
C
B
Seating Plane
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