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参数资料
| 型号： | NTE6403 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit Silicon Bilateral Switch (SBS) |
| 中文描述： | 硅集成电路双边开关（SBS）的 |
| 文件页数： | 1/2页 |
| 文件大小： | 22K |
| 代理商： | NTE6403 |
NTE6403
Integrated Circuit
Silicon Bilateral Switch (SBS)
Description:
The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of
a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/
°
C temperature coeffi-
cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate
rate effect and to obtain triggering at lower voltages.
The NTE6403 is specifically designed and characterized for applications where stability of switching
voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is
ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control cir-
cuits.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Peak Recurrent Forward Current (PW = 10
μ
s, Duty Cycle = 1%, T
A
= +25
°
C)
Peak Non–Recurrent Forward Current (PW = 10
μ
s, T
A
= +25
°
C)
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Forward Anode Current (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Gate Current (Note 1, Note 2)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Derate linearly to zero at +125
°
C.
Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited
by maximum power rating.
1A
5A
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
300mW
175mA
5mA
–55
°
to +125
°
C
–65
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C, Note 3 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Switching Voltage
V
S
I
S
7.5
–
9.0
V
μ
A
mV
μ
A
mA
μ
A
μ
A
%/
°
C
V
μ
A
Switching Current
–
–
120
Absolute Switching Voltage Difference
|V
S2
– V
S1
|
|I
S2
– I
S1
|
I
H
I
B
–
–
200
Absolute Switching Current Difference
–
–
10
Holding Current
–
–
.5
OFF State Current
V
F
= 5V
T
A
= +25
°
C
T
A
= +85
°
C
–
–
0.1
–
–
10.0
Temperature Coefficient of Switching Voltage
T
C
V
F
I
GF
T
A
= –55
°
to +85
°
C
I
F
= 175mA
V
F
= 5V, R
L
= 1k
–
±
0.05
–
–
ON State Forward Voltage Drop
–
1.7
Forward Gate Current to Trigger
–
–
100
Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply
in either direction of current flow.
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE6404 | 制造商:NTE Electronics 功能描述:SILICON UNILATERAL SWITCH - 1.0A TO98 制造商:NTE Electronics 功能描述:IC SILICON UNILATERAL SW 175mA TO98-3 制造商:NTE Electronics 功能描述:IC, SILICON UNILATERAL SW, 175mA, TO98-3 制造商:NTE Electronics 功能描述:IC, SILICON UNILATERAL SW, 175mA, TO98-3; Output Current:200mA; No. of Pins:3; Operating Temperature Min:-55C; Operating Temperature Max:125C; Filter Terminals:Through Hole; Mounting Type:Through Hole; No. of Channels:1 制造商:NTE Electronics 功能描述:Silicon Unilateral Switch 3-Pin TO-89 |
| NTE6405 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON ASYMMETRICAL SWITCH|14V V(BO) MAX|80UA I(S)|TO-92 |
| NTE6407 | 制造商:NTE Electronics 功能描述:DIODE - DIAC 28V+-4V 2A DO7/DO35 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:DIAC 32V DO-35 制造商:NTE Electronics 功能描述:DIAC, 32V, DO-35 制造商:NTE Electronics 功能描述:D-DIAC 28V+-4V-2A 制造商:NTE Electronics 功能描述:DIAC, 32V, DO-35; Breakover Voltage Vbo Min:24V; Breakover Voltage Vbo Max:32V; Breakover Current Max.:25A; Thyristor Case:DO-35; No. of Pins:2; Breakover Voltage Range:24V to 32V; Current Rating:2A; Package / Case:2-DO-35 制造商:NTE Electronics 功能描述:Thyristor DIAC 2-Pin DO-35 |
| NTE6408 | 制造商:NTE Electronics 功能描述:DIODE - DIAC 32V +-4V 2A DO7/DO35 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:DIAC 36V DO-35 制造商:NTE Electronics 功能描述:DIAC, 36V, DO-35 制造商:NTE Electronics 功能描述:DIAC, 36V, DO-35; Breakover Voltage Vbo Min:28V; Breakover Voltage Vbo Max:36V; Breakover Current Max.:25A; Thyristor Case:DO-35; No. of Pins:2; Breakover Voltage Range:28V to 36V; Filter Terminals:Axial Leaded; Package / Case:DO-35;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor DIAC 2-Pin DO-35 |
| NTE6409 | 制造商:NTE Electronics 功能描述:TRANSISTOR - UNIJUNCTION SILICON TO18 制造商:NTE Electronics 功能描述:UNIJUNC TRANSISTOR 0.3W 50mA TO-18 制造商:NTE Electronics 功能描述:UNIJUNC TRANSISTOR, 0.3W 50mA TO-18 制造商:NTE Electronics 功能描述:T-UNIJUNCTION- SI 制造商:NTE Electronics 功能描述:UNIJUNC TRANSISTOR, 0.3W 50mA TO-18; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:1A; Valley Current Iv:10mA; Power Dissipation Pd:300mW; Operating Temperature Min:-65C; Operating Temperature Max:125C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Unijunction Transistor 3-Pin TO-18 |
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