参数资料
型号: NTE6409
厂商: NTE Electronics, Inc.
英文描述: Unijunction Transistor
中文描述: 单结晶体管
文件页数: 1/2页
文件大小: 20K
代理商: NTE6409
NTE6409
Unijunction Transistor
Description:
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
Low Peak Point Current: 2
μ
A Max
Low Emitter Reverse Current: 200nA Max
Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings:
(T
A
= +25
°
C, unless otherwise specified)
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Emitter Current, I
E(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Pulse Emitter Current (Note 2), i
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Reverse Voltage, V
B2E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interbase Voltage, V
B2B1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW
50mA
2A
30V
35V
–65
°
to +125
°
C
–65
°
to +150
°
C
Note 1. Derate 3mW/
°
C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2. Capacitor discharge: 10
μ
F or less, 30V or less
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