收藏本站
参数资料
型号： NTE6409
厂商： NTE Electronics, Inc.
英文描述： Unijunction Transistor
中文描述： 单结晶体管
文件页数： 2/2页
文件大小： 20K
代理商： NTE6409
V
P
–
V
F
V
B2B1
η
=
Where: V
P
= Peak Point Emitter Voltage
V
B2B1
= Interbase Voltage
V
F
= Emitter to Base
–
One Junction Diode Drop (
Note 4. Use pulse techniques: PW
base modulation which may result in erroneous readings.
0.45V @ 10
μ
A)
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Intrinsic Standoff Ratio
η
V
B2B1
= 10V, Note 3
V
B2B1
= 3V, I
E
= 0
V
B2B1
= 3V, I
E
= 0, T
A
=
–
55
°
to +125
°
C
0.68
–
0.82
Interbase Resistance
r
BB
α
r
BB
4.7
7.0
9.1
k
%/
°
C
Interbase Resistance
Temperature Coefficient
0.1
–
0.9
Emitter Saturation Voltage
V
EB1(sat)
V
B2B1
= 10V, I
E
= 50mA, Note 4
I
B2(mod)
V
B2B1
= 10V, I
E
= 50mA
I
EB2O
V
B2E
= 30V, I
B1
= 0
I
P
V
B2B1
= 25V
I
V
V
B2B1
= 20V, R
B2
= 100
, Note 4
V
OB1
–
3.5
–
V
Modulated Interbase Current
–
15
–
mA
Emitter Reverse Current
–
0.005
0.2
μ
A
μ
A
Peak Point Emitter Current
–
1
2
Valley Point Current
8
10
18
mA
Base
–
One Peak Pulse
Voltage
6
7
–
V
Note 3. Intrinsic Standoff Ratio,
η
, is defined by the equation:
300
μ
s, Duty Cycle
≤
2% to avoid internal heating due to inter-
.030 (.762) Max
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.500
(12.7)
Min
.018 (0.45)
.041 (1.05)
45
°
Emitter
Base 1
Base 2/Case
相关PDF资料
PDF描述
NTE6410 Unijunction Transistor (UJT)
NTE6411 Bilateral Trigger Diodes (DIACS)
NTE6407 Bilateral Trigger Diodes (DIACS)
NTE6408 Bilateral Trigger Diodes (DIACS)
NTE6412 Bilateral Trigger Diodes (DIACS)
相关代理商/技术参数
参数描述
NTE6410 制造商:NTE Electronics 功能描述:TRANSISTOR - UNIJUNCTION SILICON TO92 制造商:NTE Electronics 功能描述:UNIJUNC TRANSISTOR 0.3W 50mA TO-92 制造商:NTE Electronics 功能描述:UNIJUNC TRANSISTOR, 0.3W 50mA TO-92 制造商:NTE Electronics 功能描述:T-UNIJUNCTION-SI 制造商:NTE Electronics 功能描述:UNIJUNC TRANSISTOR, 0.3W 50mA TO-92; Repetitive Peak Forward Current Itrm:1.5A; Peak Emitter Current:1A; Valley Current Iv:7mA; Power Dissipation Pd:300mW; Operating Temperature Min:-65C; Operating Temperature Max:125C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Unijunction Transistor 3-Pin TO-92
NTE6411 制造商:NTE Electronics 功能描述:DIODE - DIAC 40V +-5V 2A DO7/DO35 制造商:NTE Electronics 功能描述:D-DIAC 40V +-5V 2A 制造商:NTE Electronics 功能描述:SI BILAT TRIG DIODE 制造商:NTE Electronics 功能描述:Thyristor DIAC 2-Pin DO-35
NTE6412 制造商:NTE Electronics 功能描述:D-DIAC 63V+-7V-2A 制造商:NTE Electronics 功能描述:DIAC, 70V, 1.5A, DO-204AH; Breakover Voltage Vbo Min:56V; Breakover Voltage Vbo Max:70V; Breakover Current Max.:25A; Peak Forward Current:1.5A; Thyristor Case:DO-204AH; No. of Pins:2
NTE6415 制造商:NTE Electronics 功能描述:Thyristor SIDAC 45V 13A 2-Pin
NTE6416 制造商:NTE Electronics 功能描述:DIODE - SYDAC 55-65V AXIAL LEADED 制造商:NTE Electronics 功能描述:D-SYDAC-55-65V 制造商:NTE Electronics 功能描述:Thyristor SIDAC 45V 13A 2-Pin
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*