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参数资料
型号： NTE6401
厂商： NTE Electronics, Inc.
英文描述： Unijunction Transistor
中文描述： 单结晶体管
文件页数： 1/2页
文件大小： 20K
代理商： NTE6401
NTE6401
Unijunction Transistor
Description:
The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
Low Peak Point Current: 5
μ
A (Max)
Low Emitter Reverse Current: .005
μ
A (Typ)
Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Emitter Current, I
E(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Pulse Emitter Current (Note 2), i
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Reverse Voltage, V
B2E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interbase Voltage, V
B2B1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 Derate 3mW/
°
C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2 Capacitor discharge – 10
μ
F or less, 30 volts or less
300mW
50mA
2A
30V
35V
–65
°
to 125
°
C
–65
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
η
r
BB
ar
BB
Test Conditions
Min
Typ
Max
Unit
Intrinsic Standoff Ratio
V
B2B1
= 10V, Note 3
V
B2B1
= 3V, I
E
= 0
0.56
–
0.75
–
Interbase Resistance
4.7
7.0
9.1
k
%/
°
C
Interbase Resistance Temperature
Coefficient
0.1
–
0.9
Note 3. Intrinsic standoff ratio,
η
is defined by equation:
η
= V
P
– V
F
V
B2B1
where
V
P
= Peak Point Emitter Voltage
V
B2B1
= Interbase Voltage
V
F
= Emitter to Base–One Junction Diode Drop (
～
0.45V @ 10
μ
A)
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