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参数资料
| 型号： | NTE66 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | MOSFET N-Ch, Enhancement Mode High Speed Switch |
| 中文描述： | MOSFET的N沟道，增强模式高速开关 |
| 文件页数： | 1/3页 |
| 文件大小： | 26K |
| 代理商： | NTE66 |
NTE66
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Description:
The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
Lower R
DS(ON)
Improved Inductive Ruggedness
Fast Switching Times
Lower Input Capacitance
Extended Safe Operating Area
Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (T
J
= +25
°
C to +150
°
C), V
DSS
Drain–Gate Voltage (R
GS
= 1M
, T
J
= +25
°
C to +125
°
C), V
DGR
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Drain Current, I
D
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 2), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 3), E
AS
Avalanche Current, I
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), T
L
Thermal Resistance, Junction–to–Case, R
Θ
JC
Thermal Resistance, Junction–to–Ambient, R
Θ
JA
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), R
Θ
CS
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 0.53mH, V
dd
= 25V, R
G
= 25
, Starting T
J
= +25
°
C.
100V
100V
±
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
14A
10A
56A
±
1.5A
69mJ
14A
77W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.62W/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
+300
°
C
1.62K/W
80K/W
0.5K/W
.
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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