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参数资料
| 型号： | NTE66 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | MOSFET N-Ch, Enhancement Mode High Speed Switch |
| 中文描述： | MOSFET的N沟道，增强模式高速开关 |
| 文件页数： | 2/3页 |
| 文件大小： | 26K |
| 代理商： | NTE66 |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain
–
Source Breakdown Voltage
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 20V
V
GS
=
–
20V
V
DS
= Max. Rating, V
GS
= 0V
V
DS
= Max. Rating x 0.8, V
GS
= 0V,
T
C
= +125
°
C
V
DS
> I
D(on)
x R
DS(on)
max, V
GS
= 10V, Note 1
V
GS
= 10V, I
D
= 8.3A, Note 1
100
–
–
V
Gate Threshold Voltage
2.0
–
4.0
V
Gate
–
Source Leakage, Forward
–
–
100
nA
Gate
–
Source Leakage, Reverse
–
–
–
100
nA
μ
A
μ
A
Zero Gate Voltage Drain Current
–
–
250
–
–
1000
On
–
State Drain
–
Source Current
I
D(on)
R
DS(on)
14
–
–
A
Static Drain
–
Source On
–
State
Resistance
–
0.10
0.16
Forward Transconductance
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
V
DS
≥
50V, I
D
= 8.3A, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
5.1
7.6
–
mhos
Input Capacitance
–
640
–
pF
Output Capacitance
–
240
–
pF
Reverse Transfer Capacitance
–
72
–
pF
Turn
–
On Delay Time
V
DD
= 0.5BV
DSS
, I
D
= 8.3A, Z
O
= 12
(MOSFET switching times are essentially
independent of operating temperature)
–
10
15
ns
Rise Time
–
34
51
ns
Turn
–
Off Delay Time
–
23
35
ns
Fall Time
–
24
36
ns
Total Gate Charge
(Gate
–
Source Plus Gate
–
Drain)
V
GS
= 10V, I
D
= 14A, V
DS
= 0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature)
–
17
26
nC
Gate
–
Source Charge
Q
gs
Q
gd
–
3.7
5.5
nC
Gate
–
Drain (
“
Miller
”
) Charge
–
7
11
nC
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Source
–
Drain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current (Body Diode)
I
S
I
SM
V
SD
t
rr
–
–
14
A
Pulse Source Current (Body Diode)
Note 2
T
C
= +25
°
C, I
S
= 14A, V
GS
= 0V
T
J
= +25
°
C, I
F
= 14A, dI
F
/dt = 100A/
μ
s
–
–
56
A
Diode Forward Voltage
–
–
2.5
V
Reverse Recovery Time
–
120
250
ns
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
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