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参数资料
| 型号： | NTE887 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit Low Power, JFET OP Amplifier |
| 中文描述： | 集成电路低功耗，JFET运算放大器 |
| 文件页数： | 2/3页 |
| 文件大小： | 28K |
| 代理商： | NTE887 |
Electrical Characteristics:
(V
CC
±
=
±
15V, Note 5 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
V
IO
V
O
= 0,
R
S
= 50
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
–
3
15
mV
–
–
20
mV
Temperature Coefficient of
Input Offset Voltage
Input Offset Current
VIO
V
O
= 0, R
S
= 50
, T
A
= 0
°
to +70
°
C
–
10
–
μ
V/
°
C
I
IO
V
O
= 0, Note 6
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
–
5
200
pA
–
–
5
nA
Input Bias Current
I
IB
V
O
= 0, Note 6
–
30
400
pA
–
–
10
nA
Common
–
Mode Input Voltage Range
V
ICR
T
A
= +25
°
C
±
11
–
12
+15
±
13.5
–
–
V
Maximim Peak Output Voltage Swing
V
OM
R
L
= 10k
, T
A
= +25
°
C
R
L
≥
10k
, T
A
= 0
°
to +70
°
C
V
O
=
±
10V,
R
L
≥
10k
±
10.0
±
10.0
3
–
V
–
V
Large
–
Signal Differential Voltage
Amplification
A
VD
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
6
–
V/mV
3
–
–
V/mV
Unity
–
Gain Bandwidth
B
1
r
i
R
L
= 10k
, T
A
= +25
°
C
T
A
= +25
°
C
V
IC
= V
ICR
min, V
O
= 0, R
S
= 50
,
T
A
= +25
°
C
V
CC
=
±
15V to
±
9V, V
O
= 0,
R
S
= 50
, T
A
= +25
°
C
No Load, V
O
= 0, T
A
= +25
°
C
No Load, V
O
= 0, T
A
= +25
°
C
A
VD
= 100, T
A
= +25
°
C
–
1
–
MHz
dB
Input Resistance
–
10
12
–
Common
–
Mode Rejection Ratio
CMRR
70
86
–
Supply Volatge Rejection Ratio
(
V
CC
±
/
V
IO
)
Total Power Dissipation
k
SVR
70
95
–
dB
P
D
I
CC
–
6.0
7.5
mW
μ
A
dB
Supply Current
–
200
250
Crosstalk Attenuation
V
o1
/V
o2
–
120
–
Note 5. All characteristics are measured under open
–
loop conditions with zero common
–
mode volt-
age unless otherwise specified.
Note 6. Input bias currents of a FET
–
input operational amplifier are normal junction reverse currents,
which are temperature sensitive. Pulse techniques must be used that will maintain the junc-
tion temperature as close to the ambient temperature as possible.
Operating Characteristics:
(V
CC
±
=
±
15V, T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
V
I
= 10V, R
L
= 10k
, C
L
= 100pF
Rise Time
t
r
V
I
= 20mV, R
L
= 10k
, C
L
= 100pF
Overshoot Factor
Test Conditions
Min
Typ
Max
Unit
V/
μ
s
μ
s
Slew Rate at Unity Gain
SR
1.5
3.5
–
–
0.2
–
–
10%
–
Equivalent Input Noise Voltage
V
n
R
S
= 100
, f = 1kHz
–
42
–
nV/
√
Hz
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|---|---|
| NTE887M | Integrated Circuit Low Power, JFET OP Amplifier |
| NTE888 | Integrated Circuit Low Power Programmable Operational Amplifier |
| NTE888M | Integrated Circuit Low Power Programmable Operational Amplifier |
| NTE889 | Integrated Circuit Dual, Low Power, JFET OP Amplifier |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE887M | 制造商:NTE Electronics 功能描述:IC-LOW POWER JFET OP-AMP 制造商:NTE Electronics 功能描述:OP Amp Single GP ±18V 8-Pin PDIP |
| NTE888 | 制造商:NTE 制造商全称:NTE Electronics 功能描述:Integrated Circuit Low Power Programmable Operational Amplifier |
| NTE888M | 制造商:NTE 制造商全称:NTE Electronics 功能描述:Integrated Circuit Low Power Programmable Operational Amplifier |
| NTE889 | 制造商:NTE 制造商全称:NTE Electronics 功能描述:Integrated Circuit Dual, Low Power, JFET OP Amplifier |
| NTE889M | 制造商:NTE Electronics 功能描述:IC-DUAL LO PWR JFET OPAMP 制造商:NTE Electronics 功能描述:OP Amp Dual GP ±36V 8-Pin PDIP |
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