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参数资料
| 型号： | NTE904 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair) |
| 中文描述： | 集成电路通用晶体管阵列（两个孤立的达林顿晶体管和连接晶体管配对） |
| 文件页数： | 2/3页 |
| 文件大小： | 30K |
| 代理商： | NTE904 |
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector Cutoff Current
I
CBO
I
CEO
I
CEOD
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
(BR)CIO
V
CE(sat)
h
FE
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
B
= 0
I
C
= 1mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
I
C
= 10
μ
A, I
C1
= 0
I
C
= 10mA, I
B
= 1mA
V
CE
= 3V, I
C
= 10mA
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 10
μ
A
V
CE
= 3V, I
C1
= I
C2
= 1mA
–
–
–
15
30
5
40
–
50
60
54
0.9
0.002
–
–
24
60
7
60
0.23
100
100
–
0.97
–
nA
μ
A
μ
A
V
V
V
V
V
0.5
5
–
–
–
–
0.5
–
200
–
–
Collector Cutoff Current (Darlington Pair)
Collector
–
Emitter Breakdown Voltage
Collector
–
Base Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Collector
–
Substrate Breakdown Voltage
Collector
–
Emitter Saturation Voltage
Static Forward Current Transfer Ratio
Magnitude of Static
–
Beta Ratio
(Isolated Transistors Q
1
and Q
2
)
Static Forward Current Transfer Ratio
(Darlington Pair Q
3
and Q
4
)
h
FED
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 10
μ
A
V
CE
= 3V, I
E
= 1mA
V
CE
= 3V, I
E
= 10mA
V
CE
= 3V, I
E
= 1mA
V
CE
= 3V, I
E
= 1mA
2000
1000
0.600
–
–
–
5400
2800
0.715
0.800
0.48
1.9
–
–
Base
–
Emitter Voltage
V
BE
0.800
0.900
2.0
–
V
V
Input Offset Voltage
Temperature Coefficient of Base
–
Emitter
Voltage (Q
1
–
Q
2
)
Base (Q
3
)
–
Emitter (Q
4
) Voltage
Darlington Pair
mV
mV/
°
C
V
BED
V
CE
= 3V, I
E
= 10mA
V
CE
= 3V, I
E
= 1mA
V
CE
= 3V, I
E
= 1mA
–
1.46
1.32
4.4
1.60
1.50
–
V
V
1.10
–
Temperature Coefficient of Base
–
Emitter
Voltage (Darlington Pair Q
3
–
Q
4
)
Temperature Coefficient of Magnitude of
Input Offset Voltage
Low Frequency Noise Figure
mV/
°
C
V
CC
= 6V, V
EE
=
–
6V,
I
C1
= I
C2
= 1mA
V
CE
= 3V, I
C
= 100
μ
A,
f = 1kHz, R
S
= 1k
–
10
–
μ
V/
°
C
NF
–
3.25
–
dB
Low Frequency, Small–Signal Equivalent Circuit Characteristics
Forward Current Transfer Ratio
Short
–
Circuit Input Impedance
Open
–
Circuit Output Impedance
Open
–
Circuit Reverse Voltage Transfer Ratio
Admittance Characteristics
Forward Transfer Admittance
Input Admittance
Output Admittance
Gain
–
Bandwidth Product
Emitter
–
Base Capacitance
Collector
–
Base Capacitance
Collector
–
Substrate Capacitance
h
fe
h
ie
h
oe
h
re
V
CE
= 3V, I
C
= 1mA, f = 1kHz
–
–
–
110
3.5
15.6
–
–
–
k
μ
mhos
1.8 x 10
4
(Typ)
Y
fe
Y
ie
Y
oe
f
T
C
EB
C
CB
C
CI
V
CE
= 3V, I
C
= 1mA, f = 1kHz
31
–
j1.5 (Typ)
0.3+j0.04 (Typ)
0.001+j0.03 (Typ)
300
500
–
0.6
–
0.58
–
2.8
mmho
mmho
mmho
MHz
pF
pF
pF
V
CE
= 3V, I
C
= 3mA
V
EB
= 3V, I
E
=0
V
CB
= 3V, I
C
= 0
V
CI
= 3V, I
C
= 0
–
–
–
–
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