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| 型号： | NTGS5120PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 1.8A 6-TSOP |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 111 毫欧 @ 2.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 942pF @ 30V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 其它名称： | NTGS5120PT1GOSDKR |
NTGS5120P
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t = 5 s (Note 3)
Junction ? to ? Ambient – Steady State (Note 4)
Symbol
R q JA
R q JA
R q JA
Value
102
77.6
200
Unit
° C/W
3. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = ? 250 m A
? 60
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 48 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 5.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
V DS = 0 V, V GS = ± 20 V
$ 100
$ 200
nA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = ? 250 m A
V GS = ? 10 V, I D = ? 2.9 A
? 1.0
72
? 3.0
111
V
m W
V GS = ? 4.5 V, I D = ? 2.5 A
88
142
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 6.0 A
10.1
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
942
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = ? 30 V
72
48
Total Gate Charge
Q G(TOT)
18.1
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 10 V, V DS = ? 30 V;
I D = ? 2.9 A
1.2
2.7
3.6
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(ON)
8.7
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 10 V, V DS = ? 30 V,
I D = ? 1.0 A, R G = 6.0 W
4.9
38
12.8
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 0.9 A
T J = 25 ° C
? 0.75
? 1.0
V
Reverse Recovery Time
Charge Time
Reverse Recovery Charge
t RR
t a
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = ? 0.9 A
18.3
15.5
15.1
ns
ns
nC
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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