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| 型号： | NTHC5513T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSF N/P-CH 20V 2.9A/2.2A 1206A |
| 标准包装： | 1 |
| 系列： | chipfet™ |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A，2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 180pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 标准包装 |
| 其它名称： | NTHC5513T1GOSDKR |
NTHC5513
Power MOSFET
20 V, +3.9 A / ?3.0 A,
Complementary ChipFET t
80 m W @ 2.5 V
200 m W @ ?2.5 V
Features
? Complementary N?Channel and P?Channel MOSFET
? Small Size, 40% Smaller than TSOP?6 Package
? Leadless SMD Package Featuring Complementary Pair
? ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
? Low R DS(on) in a ChipFET Package for High Efficiency Performance
? Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
? Pb?Free Package is Available
Applications
? Load Switch Applications Requiring Level Shift
? DC?DC Conversion Circuits
? Drive Small Brushless DC Motors
? Designed for Power Management Applications in Portable, Battery
V (BR)DSS R DS(on) TYP
20 V
?20 V
http://onsemi.com
N?Channel 60 m W @ 4.5 V
P?Channel 130 m W @ ?4.5 V
D 1
G 1 G 2
I D MAX
3.9 A
?3.0 A
S2
Powered Products
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
S 1
N?Channel MOSFET
D 2
P?Channel MOSFET
Parameter
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage
V DSS
V GS
20
± 12
V
V
ChipFET
CASE 1206A
Continuous Drain
Current (Note 1)
N?Ch
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
2.9
2.1
A
PIN
STYLE 2
MARKING
t v 5
T A = 25 ° C
3.9
CONNECTIONS
DIAGRAM
P?Ch
Steady
State
t v 5
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
?2.2
?1.6
?3.0
A
D 1
D 1
8
7
1
2
S 1
G 1
1
2
8
7
Pulsed Drain Current
(Note 1)
N?Ch
P?Ch
t = 10 m s
t = 10 m s
I DM
12
?9.0
A
D 2
D 2
6
5
3
4
S 2
G 2
3
4
6
5
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.1
W
t v 5
Operating Junction and Storage
Temperature
T A = 25 ° C
T J ,
T STG
2.1
?55 to
150
° C
C1 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T L
260
° C
Device
Package
Shipping ?
Maximum ratings are those values beyond which device damage can occur.
NTHC5513T1
ChipFET
3000/Tape & Reel
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
NTHC5513T1G
ChipFET
(Pb?Free)
3000/Tape & Reel
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2004
October, 2004 ? Rev. 4
1
Publication Order Number:
NTHC5513/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHC5513T1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CHANNEL MOSFET 20V 1206A |
| NTHC60A3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Crystal Clock Oscillator |
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