参数资料
型号: NTHC5513T1G
厂商: ON Semiconductor
文件页数: 8/10页
文件大小: 0K
描述: MOSF N/P-CH 20V 2.9A/2.2A 1206A
标准包装: 1
系列: chipfet™
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.9A,2.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 80 毫欧 @ 2.9A,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
闸电荷(Qg) @ Vgs: 4nC @ 4.5V
输入电容 (Ciss) @ Vds: 180pF @ 10V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: ChipFET?
包装: 标准包装
其它名称: NTHC5513T1GOSDKR
NTHC5513
SOLDERING FOOTPRINT*
0.45 7
2.03 2
0.08
2.03 2
0.08
0.018
0.63 5
0.025
0.63 5
0.025
1.09 2
0.043
0.17 8
0.007
0.45 7
0.018
0.66
0.711
0.028
0.66
0.25 4
0.010
0.026
Figure 22. Basic
0.026
Figure 23. Style 2
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 22. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area, particularly
for the drain leads.
The minimum recommended pad pattern shown in
Figure 23 improves the thermal area of the drain
confines of the basic footprint. The drain copper area is
0.0019 sq. in. (or 1.22 sq. mm). This will assist the power
dissipation path away from the device (through the copper
lead?frame) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
connections (pins 5, 6, 7, 8) while remaining within the
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