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参数资料
| 型号： | NTHD4401PT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
| 中文描述： | 2100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 1206A-03, CHIPFET-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 66K |
| 代理商： | NTHD4401PT1 |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 3
1
Publication Order Number:
NTHD4401P/D
NTHD4401P
Power MOSFET
20 V, 3.0 A, Dual PChannel, ChipFET
Features
Low R
DS(on)
and Fast Switching Speed in a ChipFET Package
Leadless ChipFET Package 40% Smaller Footprint than TSOP6
ChipFET Package with Excellent Thermal Capabilities where Heat
Transfer is Required
PbFree Package is Available
Applications
Charge Control in Battery Chargers
Optimized for Battery and Load Management Applications in
Portable Equipment
MP3 Players, Cell Phones, Digital Cameras, PDAs
Buck and Boost DCDC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
12
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
2.1
A
T
A
= 85
°
C
1.5
t
5 s
T
A
= 25
°
C
3.0
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
1.1
W
T
A
= 85
°
C
0.6
t
5 s
T
A
= 25
°
C
2.1
Pulsed Drain Current
tp = 10 s
I
DM
9.0
A
Operating Junction and Storage Temperature
T
J
, T
stg
55 to
150
°
C
Source Current (Body Diode)
I
S
2.5
A
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Value
Unit
JunctiontoAmbient Steady State (Note 1)
R
JA
110
°
C/W
JunctiontoAmbient t
5 s
60
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
PChannel MOSFET
Device
Package
Shipping
ORDERING INFORMATION
NTHD4401PT1
ChipFET
3000/Tape & Reel
http://onsemi.com
S
1
G
1
D
1
PChannel MOSFET
S
2
G
2
D
2
20 V
200 m @ 2.5 V
130 m @ 4.5 V
R
DS(on)
TYP
3.0 A
I
D
MAX
V
(BR)DSS
NTHD4401PT1G
ChipFET
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ChipFET
CASE 1206A
STYLE 2
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
8
7
6
5
5
6
7
8
1
2
3
4
C
M
C4 = Specific Device Code
M = Month Code
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD4401PT1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4401PT3 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4401PT3G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4502N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET |
| NTHD4502NT1 | 功能描述:MOSFET 30V 3.9A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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