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参数资料
| 型号： | NTHD4401PT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
| 中文描述： | 2100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 1206A-03, CHIPFET-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 66K |
| 代理商： | NTHD4401PT1 |
NTHD4401P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(Br)DSS
V
GS
= 0 V, I
D
= 250 A
20
23
V
DraintoSource Breakdown Voltage Tem-
perature Coefficient
V
(Br)DSS
/T
J
8.0
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
T
J
= 25
°
C
1.0
A
V
DS
= 16 V
T
J
= 85
°
C
5.0
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
= 250 A
0.6
0.75
1.2
V
Gate Threshold Temperature Coefficient
V
GS(th)
/T
J
2.65
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 2.1 A
V
GS
= 2.5 V, I
D
= 1.7 A
V
GS
= 1.8 V, I
D
= 1.0 A
0.130
0.200
0.34
0.155
0.240
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 2.1 A
5.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
185
300
Output Capacitance
C
oss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 10 V
95
150
pF
Reverse Transfer Capacitance
C
rss
30
50
Total Gate Charge
Q
G(TOT)
3.0
6.0
Threshold Gate Charge
Q
G(TH)
V
GS
= 4.5 V, V
= 10 V,
I
D
= 2.1 A
0.2
nC
GatetoSource Charge
Q
GS
0.5
GatetoDrain Charge
Q
GD
0.9
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(on)
7.0
12
Rise Time
t
r
V
GS
= 4.5 V, V
DD
= 16 V,
D
= 2.1 A, R
G
= 2.5
13
25
ns
TurnOff Delay Time
t
d(off)
33
50
Fall Time
t
f
27
40
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
a d
ode o age
V
SD
= 0 V
V
GS
0 V
I
S
= 2.5 A
0 85
0.85
1 15
1.15
V
Reverse Recovery Time
t
rr
32
Charge Time
t
a
V
GS
= 0 V, dI
/dt = 90 A/ s,
I
S
= 2.1 A
10
ns
Discharge Time
t
b
22
Reverse Recovery Charge
Q
RR
2%.
15
nC
2. Pulse Test: Pulse Width
3. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
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相关代理商/技术参数 |
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|---|---|
| NTHD4401PT1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4401PT3 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4401PT3G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4502N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET |
| NTHD4502NT1 | 功能描述:MOSFET 30V 3.9A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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