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参数资料
| 型号： | NTHD4401PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CH DUAL20V CHIPFET |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 155 毫欧 @ 2.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTHD4401PT1GOSCT |
NTHD4401P
Power MOSFET
?20 V, ?3.0 A, Dual P?Channel, ChipFET t
Features
? Low R DS(on) and Fast Switching Speed in a ChipFET Package
? Leadless ChipFET Package 40% Smaller Footprint than TSOP?6
? ChipFET Package with Excellent Thermal Capabilities where Heat
http://onsemi.com
Transfer is Required
? Pb?Free Package is Available
Applications
? Charge Control in Battery Chargers
? Optimized for Battery and Load Management Applications in
V (BR)DSS
?20 V
S 1
R DS(on) TYP
130 m W @ ?4.5 V
200 m W @ ?2.5 V
S 2
I D MAX
?3.0 A
Portable Equipment
?
?
MP3 Players, Cell Phones, Digital Cameras, PDAs
Buck and Boost DC?DC Converters
G 1
G 2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
?20
" 12
Unit
V
V
D 1
P?Channel MOSFET
D 2
P?Channel MOSFET
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
?2.1
?1.5
A
ChipFET
CASE 1206A
STYLE 2
t v 5s
T A = 25 ° C
?3.0
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
P D
1.1
0.6
W
PIN
CONNECTIONS
MARKING
DIAGRAM
t v 5s
T A = 25 ° C
2.1
Pulsed Drain Current
tp = 10 m s
I DM
?9.0
A
D 1 8
1 S 1
1
8
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J , T stg
I S
T L
?55 to
150
?2.5
260
° C
A
° C
D 1 7
D 2 6
D 2 5
2 G 1
3 S 2
4 G 2
2
3
4
7
6
5
THERMAL RESISTANCE RATINGS
C4 = Specific Device Code
Rating
Junction?to?Ambient ? Steady State (Note 1)
Junction?to?Ambient ? t v 5 s
Symbol
R q JA
Value
110
60
Unit
° C/W
M = Month Code
G = Pb?Free Package
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device
NTHD4401PT1
NTHD4401PT1G
Package
ChipFET
ChipFET
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
November, 2005 ? Rev. 4
1
Publication Order Number:
NTHD4401P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD4401PT3 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4401PT3G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4502N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET |
| NTHD4502NT1 | 功能描述:MOSFET 30V 3.9A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4502NT1G | 功能描述:MOSFET 30V 3.9A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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