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| 型号： | NTHD4502NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 2.9A CHIPFET |
| 产品目录绘图： | MOSFET ChipFET |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 2.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 140pF @ 15V |
| 功率 - 最大： | 640mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTHD4502NT1GOSDKR |
NTHD4502N
Power MOSFET
30 V, 3.9 A, Dual N ? Channel ChipFET t
Features
? Planar Technology Device Offers Low R DS(on) and Fast Switching Speed
? Leadless ChipFET Package has 40% Smaller Footprint than TSOP ? 6.
Ideal Device for Applications Where Board Space is at a Premium.
? ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
? These Devices are Pb ? Free and are RoHS Compliant
Applications
V (BR)DSS
30 V
http://onsemi.com
R DS(on) TYP
80 m W @ 10 V
110 m W @ 4.5 V
I D MAX
3.9 A
? DC ? DC Buck or Boost Converters
? Low Side Switching
? Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G 1
(2)
D 1 (7, 8)
G 2
(4)
D 2 (5, 6)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
S 1 (1)
N ? Channel MOSFET
S 2 (3)
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
2.9
2.1
A
8
ChipFET
CASE 1206A
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t ≤ 5s
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
I D
P D
3.9
1.13
2.1
2.2
1.6
0.64
W
A
W
1
PIN
CONNECTIONS
D 1 8 1 S 1
D 1 7 2 G 1
1
2
STYLE 2
MARKING
DIAGRAM
8
7
Pulsed Drain Current
ESD Capability
(Note 3)
t p = 10 m s
C = 100 pF,
R S = 1500 W
I DM
ESD ?
HBM
12
125
A
V
D 2 6
D 2 5
3 S 2
4 G 2
3
4
6
5
Operating Junction and Storage Temperature
T J ,
T STG
? 55 to
150
° C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
2.5
260
A
° C
C5 = Specific Device Code
M = Month Code
G = Pb ? Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: HBM Class 0.
ORDERING INFORMATION
Device Package Shipping ?
NTHD4502NT1G ChipFET 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 6
1
Publication Order Number:
NTHD4502N/D
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| NTHD4508NT1G | 功能描述:MOSFET 20V 4.1A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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