- 您现在的位置：买卖IC网 > PDF目录363711 > NTHS4101P (ON SEMICONDUCTOR) 20 V, P-Channel Power MOSFET ChipFET Single Package(20V，单P通道，ChipFET封装的功率MOSFET) PDF资料下载
参数资料
| 型号： | NTHS4101P |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | 20 V, P-Channel Power MOSFET ChipFET Single Package(20V，单P通道，ChipFET封装的功率MOSFET) |
| 中文描述： | 20五，P沟道功率MOSFET ChipFET的单包（20V的，单P通道，ChipFET的封装的功率MOSFET的） |
| 文件页数： | 1/6页 |
| 文件大小： | 52K |
| 代理商： | NTHS4101P |
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 0
1
Publication Order Number:
NTHS4101P/D
NTHS4101P
20 V, PChannel
Power MOSFET ChipFET
Single Package
Features
Offers an Ultra Low R
DS(on)
Solution in the ChipFET Package
Miniature ChipFET Package 40% Smaller Footprint than TSOP6
making it an Ideal Device for Applications where Board Space is at a
Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low R
DS(on)
at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
Charge Control in Battery Chargers
Buck and Boost Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
Vdc
GatetoSource Voltage Continuous
V
GS
8.0
Vdc
Drain Current Continuous
5 seconds
I
D
I
D
4.8
6.7
A
Total Power Dissipation
Continuous @ T
A
= 25
°
C
(5 sec) @ T
A
= 25
°
C
Continuous @ 85
°
C
(5 sec) @ 85
°
C
P
D
1.3
2.5
0.7
1.3
W
Continuous Source Current
Is
4.8
A
Thermal Resistance (Note 1)
JunctiontoAmbient, 5 sec
JunctiontoAmbient, Continuous
R
JA
R
JA
50
95
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to a 1
″
x 1
″
FR4 board.
G
S
D
PChannel MOSFET
S
D
G
D
D
D
D
D
1
2
3
4
5
6
7
8
Device
Package
Shipping
ORDERING INFORMATION
NTHS4101PT1
ChipFET
3000 Tape / Reel
PIN
CONNECTIONS
ChipFET
CASE 1206A
Style 1
MARKING
DIAGRAM
C
C6 = Specific Device Code
1
2
3
4
8
7
6
5
http://onsemi.com
20 V
30 m @ 2.5 V
21 m @ 4.5 V
R
DS(on)
TYP
4.8 A
I
D
MAX
V
(BR)DSS
42 m @ 1.8 V
NTHS4101PT1G
ChipFET
(Pbfree)
3000 Tape / Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相关PDF资料 |
PDF描述 |
|---|---|
| NTHS4501N | Power MOSFET 30V, 6.7A, Single N Channel, ChipFET Package(30V, 6.7A功率MOSFET) |
| NTHS5402T1 | Power MOSFET N-Channel ChipFET TM(N沟道ChipFET TM功率MOSFET) |
| NTHS5441 | −20 V, −5.3 A, P−Channel ChipFET |
| NTHS5441T1 | −20 V, −5.3 A, P−Channel ChipFET |
| NTHS5441T1G | −20 V, −5.3 A, P−Channel ChipFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHS4101P/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 20 V Single P-Channel ChipFET ? |
| NTHS4101P_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, 6.7 A, P-Channel ChipFET |
| NTHS4101PT1 | 功能描述:MOSFET -20V -6.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS4101PT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Trench Power MOSFET 20 V P Channel Single ChipFET |
| NTHS4101PT1G | 功能描述:MOSFET -20V -6.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。