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参数资料
| 型号： | NTHS4101P |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | 20 V, P-Channel Power MOSFET ChipFET Single Package(20V，单P通道，ChipFET封装的功率MOSFET) |
| 中文描述： | 20五，P沟道功率MOSFET ChipFET的单包（20V的，单P通道，ChipFET的封装的功率MOSFET的） |
| 文件页数： | 6/6页 |
| 文件大小： | 52K |
| 代理商： | NTHS4101P |
NTHS4101P
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NTHS4101P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHS4101P/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 20 V Single P-Channel ChipFET ? |
| NTHS4101P_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, 6.7 A, P-Channel ChipFET |
| NTHS4101PT1 | 功能描述:MOSFET -20V -6.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS4101PT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Trench Power MOSFET 20 V P Channel Single ChipFET |
| NTHS4101PT1G | 功能描述:MOSFET -20V -6.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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