- 您现在的位置：买卖IC网 > PDF目录18442 > NTHS5441PT1G (ON Semiconductor)MOSFET P-CH 20V 3.9A CHIPFET PDF资料下载
参数资料
| 型号： | NTHS5441PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.9A CHIPFET |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 3.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 710pF @ 5V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
NTHS5441
THERMAL CHARACTERISTICS
Characteristic
Maximum Junction?to?Ambient (Note 2)
t v 5 sec
Steady State
Maximum Junction?to?Foot (Drain)
Symbol
R q JA
R q JF
Typ
40
80
15
Max
50
95
20
Unit
° C/W
° C/W
Steady State
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate?Body Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = ?250 m A
V DS = 0 V, V GS = " 12 V
V DS = ?16 V, V GS = 0 V
?0.6
?1.2
" 100
?1.0
V
nA
m A
V DS = ?16 V, V GS = 0 V,
T J = 85 ° C
?5.0
On?State Drain Current (Note 3)
I D(on)
V DS v ?5.0 V, V GS = ?4.5 V
?20
A
Drain?Source On?State Resistance (Note 3)
r DS(on)
V GS = ?3.6 V, I D = ?3.7 A
?
0.050
0.06
W
V GS = ?4.5 V, I D = ?3.9 A
V GS = ?2.5 V, I D = ?3.1 A
?
0.046
0.070
?
0.083
Forward Transconductance (Note 3)
g fs
V DS = ?10 V, I D = ?3.9 A
12
mhos
Diode Forward Voltage (Note 3)
V SD
I S = ?2.1 A, V GS = 0 V
?0.8
?1.2
V
Dynamic (Note 4)
Total Gate Charge
Gate?Source Charge
Gate?Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn?On Delay Time
Q G
Q GS
Q GD
C iss
C oss
C rss
t d(on)
V DS = ?10 V, V GS = ?4.5 V,
I D = ?3.9 A
V DS = ?5.0 Vdc, V GS = 0 Vdc,
f = 1.0 MHz
9.7
1.2
3.6
710
400
140
14
22
30
nC
pF
ns
Rise Time
Turn?Off Delay Time
Fall Time
Source?Drain Reverse Recovery Time
t r
t d(off)
t f
t rr
V DD = ?10 V, R L = 10 W
I D ^ ?1.0 A, V GEN = ?4.5 V,
R G = 6 W
I F = ?1.1 A, di/dt = 100 A/ m s
22
42
35
30
55
100
70
60
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| FXO-HC730-14.3181 | OSC 14.3181 MHZ 3.3V HCMOS SMD |
| FXO-HC730-14.31818 | OSC 14.31818 MHZ 3.3V HCMOS SMD |
| FXO-HC730-14.74 | OSC 14.74 MHZ 3.3V HCMOS SMD |
| FXO-HC730-14.745 | OSC 14.745 MHZ 3.3V HCMOS SMD |
| FXO-HC730-14.7456 | OSC 14.7456 MHZ 3.3V HCMOS SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHS5441T1 | 功能描述:MOSFET -20V -5.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS5441T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET P-Channel ChipFET |
| NTHS5441T1G | 功能描述:MOSFET -20V -5.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS5443 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTHS5443T1 | 功能描述:MOSFET -20V -4.9A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。