参数资料
型号: NTJS3151PT2G
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET P-CH 12V 2.7A SOT-363
产品变化通告: LTB Notification
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
电流 - 连续漏极(Id) @ 25° C: 2.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 60 毫欧 @ 3.3A,4.5V
Id 时的 Vgs(th)(最大): 400mV @ 100µA
闸电荷(Qg) @ Vgs: 8.6nC @ 4.5V
输入电容 (Ciss) @ Vds: 850pF @ 12V
功率 - 最大: 625mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SOT-363
包装: 带卷 (TR)
NTJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P ? Channel,
ESD Protected SC ? 88
Features
? Leading Trench Technology for Low R DS(ON) Extending Battery Life
? SC ? 88 Small Outline (2x2 mm, SC70 ? 6 Equivalent)
? Gate Diodes for ESD Protection
? Pb ? Free Packages are Available
Applications
? High Side Load Switch
? Cell Phones, Computing, Digital Cameras, MP3s and PDAs
V (BR)DSS
? 12 V
http://onsemi.com
R DS(on) Typ
45 m W @ ? 4.5 V
67 m W @ ? 2.5 V
133 m W @ ? 1.8 V
SC ? 88 (SOT ? 363)
I D Max
? 3.3 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Units
D
1
6
D
Drain ? to ? Source Voltage
V DSS
? 12
V
D
2
5
D
Gate ? to ? Source Voltage
V GS
± 12
V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
? 2.7
? 2.0
? 3.3
0.625
A
W
G
3
Top View
4
D
S
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I DM
T J ,
T STG
I S
T L
? 8.0
? 55 to
150
? 0.8
260
A
° C
A
° C
G
3 k W
S
SC ? 88/SOT ? 363
G
1
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Symbol Max Units
Junction ? to ? Ambient – Steady State R q JA 200 ° C/W
Junction ? to ? Ambient ? t ≤ 5 s R q JA 141
Junction ? to ? Lead – Steady State R q JL 102
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
CASE 419B
STYLE 28
TJ = Device Code
M = Date Code
MARKING DIAGRAM &
PIN ASSIGNMENT
D D S
6
TJ M G
D D G
G
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 2
1
Publication Order Number:
NTJS3151/D
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