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| 型号： | NTK3043NT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 210MA SOT-723 |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 8,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 210mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 欧姆 @ 10mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 11pF @ 10V |
| 功率 - 最大： | 310mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-723 |
| 供应商设备封装： | SOT-723 |
| 包装： | 带卷 (TR) |
NTK3043N
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t = 5 s (Note 3)
Junction ? to ? Ambient – Steady State Minimum Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
280
228
400
Unit
? C/W
3. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise specified)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V GS = 0 V, I D = 100 m A
I D = 100 m A, Reference to 25 ? C
V (BR)DSS
V (BR)DSS /T J
20
27
V
mV/ ? C
Zero Gate Voltage Drain Current
V GS = 0 V,
V DS = 16 V
T J = 25 ? C
T J = 125 ? C
I DSS
1
10
m A
Gate ? to ? Source Leakage Current
V DS = 0 V, V GS = ? 5 V
I GSS
1
m A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain ? to ? Source On Resistance
V GS = V DS , I D = 250 m A
V GS = 4.5V, I D = 10 mA
V GS(TH)
V GS(TH) /T J
R DS(ON)
0.4
? 2.4
1.5
1.3
3.4
V
mV/ ? C
V GS = 4.5V, I D = 255 mA
1.6
3.8
V GS = 2.5 V, I D = 1 mA
V GS = 1.8 V, I D = 1 mA
V GS = 1.65 V, I D = 1 mA
2.4
5.1
6.8
4.5
10
15
W
Forward Transconductance
V DS = 5 V, I D = 100 mA
g FS
0.275
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
11
Output Capacitance
Reverse Transfer Capacitance
V GS = 0 V, f = 1 MHz, V DS = 10 V
C OSS
C RSS
8.3
2.7
pF
SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)
Turn ? On Delay Time
t d(ON)
13
Rise Time
Turn ? Off Delay Time
Fall Time
V GS = 4.5 V, V DD = 5 V, I D = 10 mA,
R G = 6 W
t r
t d(OFF)
t f
15
94
55
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V GS = 0 V, I S = 286 mA
T J = 25 ? C
T J = 125 ? C
V SD
0.83
0.69
1.2
V
Reverse Recovery Time
t RR
9.1
Charge Time
Discharge Time
Reverse Recovery Charge
V GS = 0 V, V DD = 20 V, dISD/dt = 100 A/ m s,
I S = 286 mA
t a
t b
Q RR
7.1
2.0
3.7
ns
nC
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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相关代理商/技术参数 |
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| NTK3134N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 |
| NTK3134NT1G | 功能描述:MOSFET 20V/6V N CH T1 890mA 0.3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3134NT1H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3134NT5G | 功能描述:MOSFET 20V/6V N CH T1 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3134NT5H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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