参数资料
型号: NTK3139PT1G
厂商: ON Semiconductor
文件页数: 5/5页
文件大小: 0K
描述: MOSFET P-CH 20V 780MA SOT-723
产品目录绘图: MOSFET SOT-723 Pkg
标准包装: 10
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 660mA
开态Rds(最大)@ Id, Vgs @ 25° C: 480 毫欧 @ 780mA,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
输入电容 (Ciss) @ Vds: 170pF @ 16V
功率 - 最大: 310mW
安装类型: 表面贴装
封装/外壳: SOT-723
供应商设备封装: SOT-723
包装: 标准包装
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: NTK3139PT1GOSDKR
NTK3139P
PACKAGE DIMENSIONS
SOT ? 723
CASE 631AA
ISSUE D
2X
b1
e
? X ?
D
E
1 2
TOP VIEW
1
3 ? Y ?
2X b
0.08 X Y
3X L
A
C
SIDE VIEW
H E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.45 0.50 0.55
b 0.15 0.21 0.27
b1 0.25 0.31 0.37
C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e 0.40 BSC
H E 1.15 1.20 1.25
L 0.29 REF
L2 0.15 0.20 0.25
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTK3139P/D
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NTK3142PT1G 功能描述:MOSFET PFET 20V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTK3142PT1H 制造商:ON Semiconductor 功能描述:HALOGEN FREE PFET SOT723