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| 型号： | NTLJD3115PTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 4.1A 6-WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 531pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJD3115P
Power MOSFET
? 20 V, ? 4.1 A, m Cool t Dual P ? Channel,
2x2 mm WDFN Package
Features
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
? 2x2 mm Footprint Same as SC ? 88
? Lowest R DS(on) Solution in 2x2 mm Package
? 1.8 V R DS(on) Rating for Operation at Low Voltage Gate Drive Logic
Level
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? Bidirectional Current Flow with Common Source Configuration
? This is a Pb ? Free Device
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) MAX I D MAX (Note 1)
100 m W @ ? 4.5 V
135 m W @ ? 2.5 V ? 4.1 A
200 m W @ ? 1.8 V
S1 S2
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment
? Li ? Ion Battery Charging and Protection Circuits
? High Side Load Switch
G1
D1
P ? CHANNEL MOSFET
G2
D2
P ? CHANNEL MOSFET
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
D2
D1
MARKING
DIAGRAM
Steady
State
2 JDM G 5
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
T A = 25 ° C
T A = 85 ° C
V DSS
V GS
I D
? 20
± 8.0
? 3.3
? 2.4
V
V
A
Pin 1
WDFN6 1 6
CASE 506AN
3 4
JD = Specific Device Code
M = Date Code
Power Dissipation
(Note 1)
t ≤ 5s
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 25 ° C
P D
? 4.1
1.5
2.3
W
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
? 2.3
? 1.6
0.71
A
W
S1
G1
1
2
D1
6
5
D1
G2
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J , T STG
? 20
? 55 to
150
A
° C
D2
3
D2
4
S2
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
? 1.9
260
A
° C
(Top View)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
NTLJD3115PT1G
Package
WDFN6
(Pb ? Free)
Shipping ?
3000/Tape & Reel
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm 2 , 2 oz Cu.
NTLJD3115PTAG WDFN6 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 6
1
Publication Order Number:
NTLJD3115P/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTLJD3119CTBG | MOSF N/P-CH 20V 2.6A/2.3A 6WDFN |
| NTLJD3181PZTBG | MOSFET P-CH DUAL 20V 4A 6WDFN |
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| NTLJD3183CZTBG | MOSFET COMPL 20V LOW PRO 6WDFN |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJD3119C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Package |
| NTLJD3119CTAG | 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJD3119CTBG | 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJD3181PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package |
| NTLJD3181PZTAG | 功能描述:MOSFET 20V UCOOL DUAL P-CHN 4.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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