参数资料
型号: NTLJD4116NT1G
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CHAN DUAL 30V 6-WDFN
标准包装: 3,000
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 70 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 6.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 427pF @ 15V
功率 - 最大: 710mW
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-WDFN(2x2)
包装: 带卷 (TR)
NTLJD4116N
Power MOSFET
30 V, 4.6 A, m Cool t Dual N?Channel,
2x2 mm WDFN Package
Features
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal
http://onsemi.com
?
?
?
?
?
Conduction
2x2 mm Footprint Same as SC?88
Lowest R DS(on) Solution in 2x2 mm Package
1.5 V R DS(on) Rating for Operation at Low Voltage Gate Drive Logic
Level
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a Pb?Free Device
V (BR)DSS
30 V
R DS(on) MAX
70 m W @ 4.5 V
90 m W @ 2.5 V
125 m W @ 1.8 V
250 m W @ 1.5 V
I D MAX (Note 1)
4.6 A
Applications
? DC?DC Converters (Buck and Boost Circuits)
? Low Side Load Switch
? Optimized for Battery and Load Management Applications in
G
D
?
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
Level Shift for High Side Load Switch
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
N?CHANNEL MOSFET
MARKING
DIAGRAM
Steady
State
2 JFM G
WDFN6
Drain?to?Source Voltage
Gate?to?Source Voltage
Continuous Drain
Current (Note 1)
T A = 25 ° C
T A = 85 ° C
V DSS
V GS
I D
30
± 8.0
3.7
2.7
V
V
A
1
1
JF = Specific Device Code
CASE 506AN 3 G
6
5
4
Power Dissipation
(Note 1)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
P D
4.6
1.5
W
M = Date Code
G = Pb?Free Package
(Note: Microdot may be in either location)
t ≤ 5s
2.3
PIN CONNECTIONS
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
2.5
1.8
0.71
A
W
S1
1
D1
6
D1
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J , T STG
20
?55 to
150
A
° C
G1
D2
2
3
D2
5
4
G2
S2
Source Current (Body Diode) (Note 2)
I S
2.0
A
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
(Top View)
Maximum ratings are those values beyond which device damage can occur.
ORDERING INFORMATION
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
Device
NTLJD4116NT1G
Package
WDFN6
(Pb?Free)
Shipping ?
3000/Tape & Reel
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm 2 , 2 oz Cu.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
May, 2006 ? Rev. 4
1
Publication Order Number:
NTLJD4116N/D
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