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| 型号： | NTLJS1102PTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 8V 3.7A 6-WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 6.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 720mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1585pF @ 4V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS1102P
Power MOSFET
? 8 V, ? 8.1 A, m COOL ] Single P ? Channel,
2x2 mm, WDFN package
Features
? WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
? Lowest R DS(on) in 2 x 2 mm Package
? 1.2 V R DS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
? 2 x 2 mm Footprint Same as SC ? 88 Package
? Low Profile (<0.8 mm) for Easy Fit in Thin Environments
? This is a Halide ? Free Device
? This is a Pb ? Free Device
Applications
? High Side Load Switch
? Li Ion Battery Linear Mode Charging
? Optimized for Battery and Load Management Applications in
Portable Equipment
V (BR)DSS
? 8.0 V
http://onsemi.com
R DS(on) MAX
36 m W @ ? 4.5 V
45 m W @ ? 2.5 V
68 m W @ ? 1.8 V
90 m W @ ? 1.5 V
300 m W @ ? 1.2 V
S
G
I D MAX
? 6.2 A
? 5.5 A
? 3.0 A
? 1.0 A
? 0.2 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 8
± 6
V
V
D
P ? CHANNEL MOSFET
2 J6M G
Continuous
Drain Current
(Note 1)
Power
Dissipation
(Note 1)
Steady
State
t v 5s
Steady
State
t v 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
? 6.2
? 4.5
? 8.1
1.9
3.3
A
W
S
Pin 1
D
WDFN6
CASE 506AP
MARKING
DIAGRAM
1 6
5
3 G 4
Continuous
Drain Current
(Note 2)
Power
Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
? 3.7
? 2.7
0.7
A
W
J6 = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Pulsed Drain Current
t p = 10 m s
I DM
? 30
A
PIN CONNECTIONS
Operating Junction and Storage
Temperature
T J , T STG
? 55 to
150
° C
D
1
6
D
Source Current (Body Diode) (Note 2) I S ? 5.5 A
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface ? mounted on FR4 board using the minimum recommended pad size
(Cu area = 30 mm 2 [2 oz] including traces).
D
G
2
3
D
S
(Top View)
5
4
D
S
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
November, 2008 ? Rev. 0
1
Publication Order Number:
NTLJS1102P/D
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相关代理商/技术参数 |
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| NTLJS2103P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTLJS2103PTAG | 功能描述:MOSFET PFET WDFN6 12V 5.9A 0.025 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS2103PTBG | 功能描述:MOSFET PFET WDFN6 12V 5.9A 0.025 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS3113P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
| NTLJS3113P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
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