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| 型号： | NTLJS2103PTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 3.5A 6-WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1157pF @ 6V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS2103P
Power MOSFET
? 12 V, ? 7.7 A, m Cool t Single P ? Channel,
2x2 mm, WDFN Package
Features
? Recommended Replacement Device ? NTLUS3A40P
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
? 2x2 mm Footprint Same as SC ? 88 Package
? Lowest R DS(on) Solution in 2x2 mm Package
? 1.2 V R DS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
? 12 V
http://onsemi.com
R DS(on) TYP I D MAX (Note 1)
25 m W @ ? 4.5 V ? 5.9 A
35 m W @ ? 2.5 V ? 5.3 A
45 m W @ ? 1.8 V ? 2.0 A
60 m W @ ? 1.5 V ? 1.0 A
95 m W @ ? 1.2 V ? 0.2 A
S
Applications
? High Side Load Switch
? DC ? DC Converters (Buck and Boost Circuits)
? Optimized for Battery and Load Management Applications in
Portable Equipment
? Li ? Ion Battery Linear Mode Charging
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
D
D
P ? CHANNEL MOSFET
MARKING
DIAGRAM
Steady
State
1
6
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
t ≤ 5s
Power Dissipation Steady
(Note 1) State
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
Symbol
V DSS
V GS
I D
P D
Value
? 12
± 8.0
? 5.9
? 4.2
? 7.7
1.9
3.3
Unit
V
V
A
W
Pin 1
D
WDFN6 1 6
CASE 506AP 2 J7M G 5
3 G 4
J7 = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
T A = 25 ° C
Steady T A = 85 ° C
State
T A = 25 ° C
t p = 10 m s
I D
P D
I DM
? 3.5
? 2.5
0.7
? 24
A
W
A
D
G
2
3
S
D
5
4
D
S
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
T J , T STG
I S
? 55 to
150
? 2.7
° C
A
(Top View)
ORDERING INFORMATION
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
NTLJS2103PTAG
NTLJS2103PTBG
Package
WDFN6
(Pb ? Free)
WDFN6
(Pb ? Free)
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm 2 , 2 oz Cu).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
March, 2011 ? Rev. 3
1
Publication Order Number:
NTLJS2103P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJS2103PTBG | 功能描述:MOSFET PFET WDFN6 12V 5.9A 0.025 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS3113P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
| NTLJS3113P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
| NTLJS3113PT1G | 功能描述:MOSFET PFET 2X2 20V 9.5A 42MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS3113PTAG | 功能描述:MOSFET PFET 20V 9.5A 42MOHM 2X2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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