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| 型号： | NTLJS2103PTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 3.5A 6-WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1157pF @ 6V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS2103P
PACKAGE DIMENSIONS
WDFN6 2x2
CASE 506AP ? 01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
D
A
B
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND
IS MEASURED BETWEEN 0.15 AND 0.20mm FROM
TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
WELL AS THE TERMINALS.
5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL
LEAD IS CONNECTED TO TERMINAL LEAD # 4.
PIN ONE
REFERENCE
E
6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG.
MILLIMETERS
DIM MIN MAX
A
0.70 0.80
A1
0.00 0.05
2X
2X
0.10 C
0.10 C
0.10 C
A3
A3
b
b1
D
D2
E
E2
e
K
0.20 REF
0.25 0.35
0.51 0.61
2.00 BSC
1.00 1.20
2.00 BSC
1.10 1.30
0.65 BSC
0.15 REF
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
A
L
L2
J
0.20 0.30
0.20 0.30
0.27 REF
7X
0.08 C
A1
J1
0.65 REF
D2
4X
e
C
SEATING
PLANE
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
6X
L
1
3
L2
2.30
E2
b1
6X
0.10 C A
B
6X
0.43
1.10
6X
0.35
0.05 C
K
6
4
b
NOTE 5
6X
1.25
1
0.60
J
0.10 C A
B
0.35
J1
BOTTOM VIEW
0.05 C
NOTE 3
0.34
0.65
PITCH
0.66
DIMENSIONS: MILLIMETERS
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ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTLJS2103P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJS2103PTBG | 功能描述:MOSFET PFET WDFN6 12V 5.9A 0.025 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS3113P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
| NTLJS3113P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
| NTLJS3113PT1G | 功能描述:MOSFET PFET 2X2 20V 9.5A 42MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS3113PTAG | 功能描述:MOSFET PFET 20V 9.5A 42MOHM 2X2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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