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| 型号： | NTLJS2103PTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 3.5A 6-WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1157pF @ 6V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS2103P
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t ≤ 5 s (Note 3)
Junction ? to ? Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
65
38
180
Unit
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm 2 , 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, Ref to 25 ° C
? 12
? 8.0
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V DS = ? 12 V, V GS = 0 V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 5.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 0.1
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.3
2.6
? 0.8
V
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = ? 4.5, I D = ? 5.9 A
25
40
m W
V GS = ? 4.5, I D = ? 3.0 A
V GS = ? 2.5, I D = ? 5.3 A
V GS = ? 2.5, I D = ? 3.0 A
V GS = ? 1.8, I D = ? 2.0 A
V GS = ? 1.5, I D = ? 1.0 A
V GS = ? 1.2, I D = ? 200 mA
25
35
35
45
60
95
40
50
50
75
100
400
Forward Transconductance
g FS
V DS = ? 6.0 V, I D = ? 2.0 A
8.8
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ? 6.0 V
1157
300
200
pF
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = ? 4.5 V, V DS = ? 9.6 V,
I D = ? 5.9 A
12.8
0.4
1.6
3.6
15.7
15
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(ON)
8.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 8.0 V,
I D = ? 5.9 A, R G = 2.0 W
27
74
88
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V SD
V GS = 0 V, I S = ? 1.0 A
T J = 25 ° C
T J = 85 ° C
0.62
0.56
1.0
V
Reverse Recovery Time
t RR
27
50
Charge Time
Discharge Time
Reverse Recovery Time
t a
t b
Q RR
V GS = 0 V, d ISD /d t = 100 A/ m s,
I S = ? 1.0 A
10
17
14
ns
nC
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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| NTLJS3113P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
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