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| 型号： | NTLJS4159NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 3.6A 6-WFDN |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1045pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS4159N
Power MOSFET
30 V, 7.8 A, m Cool t Single N?Channel,
2x2 mm WDFN Package
Features
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal
http://onsemi.com
?
?
?
?
?
Conduction
2x2 mm Footprint Same as SC?88
Lowest R DS(on) in 2x2 mm Package
1.8 V R DS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a Pb?Free Device
V (BR)DSS
30 V
R DS(on) MAX
35 m W @ 4.5 V
45 m W @ 2.5 V
55 m W @ 1.8 V
S
I D MAX (Note 1)
7.8 A
Applications
? DC?DC Conversion
? Boost Circuits for LED Backlights
? Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
? Low Side Load Switch
G
D
N?CHANNEL MOSFET
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain?to?Source Voltage
Symbol
V DSS
Value
30
Unit
V
S
D
MARKING
DIAGRAM
2 JBM G 5
Gate?to?Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
V GS
I D
± 8.0
6.0
4.4
V
A
Pin 1
WDFN6
CASE 506AP
1 6
3 G 4
t ≤ 5s
T A = 25 ° C
7.8
JB = Specific Device Code
M = Date Code
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.92
W
G = Pb?Free Package
(Note: Microdot may be in either location)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
3.3
3.6
2.6
0.70
A
W
D
1
PIN CONNECTIONS
6
D
Pulsed Drain Current
t p = 10 m s
I DM
28
A
D
2
D
5
D
Operating Junction and Storage Temperature
T J , T STG
?55 to
° C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
150
3.0
260
A
° C
G
3
S
(Top View)
4
S
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
ORDERING INFORMATION
Operating Conditions is not implied. Extended exposure to stresses above the
Device
Package
Shipping ?
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
NTLJS4159NT1G
WDFN6
3000/Tape & Reel
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz Cu.
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
September, 2006 ? Rev. 4
1
Publication Order Number:
NTLJS4159N/D
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