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| 型号： | NTLUF4189NZTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.2A 6UDFN |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 1.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 95pF @ 15V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN（1.6x1.6） |
| 包装： | 带卷 (TR) |
NTLUF4189NZ
Power MOSFET and
Schottky Diode
30 V, N ? Channel with 0.5 A Schottky
Barrier Diode, 1.6 x 1.6 x 0.55 mm
m Cool t Package
Features
? Low Qg and Capacitance to Minimize Switching Losses
? Low Profile UDFN 1.6x1.6 mm for Board Space Saving
? Low VF Schottky Diode
? ESD Protected Gate
? This is a Halide ? Free Device
? This is a Pb ? Free Device
V (BR)DSS
30 V
http://onsemi.com
MOSFET
R DS(on) MAX
200 m W @ 4.5 V
250 m W @ 3.0 V
350 m W @ 2.5 V
I D MAX
1.5 A
0.5 A
0.5 A
Applications
? DC-DC Boost Converter
? Color Display and Camera Flash Regulators
? Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Units
V R MAX
30 V
SCHOTTKY DIODE
V F TYP
0.52 V
D
A
I F MAX
0.5 A
Drain-to-Source Voltage
Gate-to-Source Voltage
V DSS
V GS
30
± 8.0
V
V
G
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
1.5
1.1
1.9
0.8
A
W
S
N ? Channel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
Continuous Drain
Current (Note 2)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
I D
1.3
1.2
0.9
A
1
6
UDFN6
CASE 517AT
m COOL t
1
AA M G
G
Power Dissipation (Note 2) T A = 25 ° C
Pulsed Drain Current tp = 10 m s
MOSFET Operating Junction and Storage
Temperature
Schottky Operating Junction & Storage
Temperature
P D
I DM
T J ,
T STG
T J ,
T STG
0.5
8.0
-55 to
150
-55 to
125
W
A
° C
° C
AA = Specific Device Code
M = Date Code
G = Pb ? Free Package
PIN CONNECTIONS
6
1
S
Source Current (Body Diode) (Note 2) I S 1.5 A
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Gate-to-Source ESD Rating ESD 1000 V
(HBM) per JESD22 ? A114F
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm 2 , 2 oz. Cu.
K
A K
N/C 2 5 G
D
D 3 4
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2009
March, 2009 ? Rev. 1
1
Publication Order Number:
NTLUF4189NZ/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLUF4189NZTBG | 功能描述:MOSFET NFET WDFN6 30V 1.5A 200mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLUS3192PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −4.2 A, Cool Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package |
| NTLUS3192PZTAG | 功能描述:MOSFET PFET WDFN6 20V 3.4A 85 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLUS3192PZTBG | 功能描述:MOSFET PFET WDFN6 20V 3.4A 85 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLUS3A18PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??20 V, a??8.2 A, Single Pa??Channel, 2.0x2.0x0.55 mm Cool UDFN Package |
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