- 您现在的位置：买卖IC网 > Datasheet目录490 > NTLJS1102PTBG (ON Semiconductor)MOSFET P-CH 8V 3.7A 6-WDFN Datasheet资料下载
参数资料
| 型号： | NTLJS1102PTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 8V 3.7A 6-WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 6.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 720mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1585pF @ 4V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS1102P
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t v 5 s (Note 3)
Junction ? to ? Ambient – Steady State min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
65
38
180
Unit
° C/W
3. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface ? mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm 2 [2 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, Ref to 25 ° C
? 8.0
? 7.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 8V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 6V
± 0.1
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.29
2.7
? 0.72
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 6.2 A
25
36
m W
V GS = ? 4.5 V, I D = ? 3.0 A
V GS = ? 2.5 V, I D = ? 5.5 A
V GS = ? 2.5 V, I D = ? 3.0 A
V GS = ? 1.8 V, I D = ? 3.0 A
V GS = ? 1.5 V, I D = ? 1.0 A
V GS = ? 1.2 V, I D = ? 0.2 A
25
34
34
45
55
80
36
45
45
68
90
300
Forward Transconductance
g FS
V DS = ? 4 V, I D = ? 6.2 A
14.3
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = ? 4 V
1585
350
185
pF
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 4 V;
I D = ? 6.2 A
15.7
0.8
1.9
3.3
25
nC
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 6)
Turn ? On Delay Time
t D(ON)
8.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DS = ? 4 V,
I D = ? 6.2 A, R G = 1 W
41
80
70
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTLJS2103PTAG | MOSFET P-CH 12V 3.5A 6-WDFN |
| NTLJS3113PTAG | MOSFET P-CH 20V 3.5A 6-WDFN |
| NTLJS3180PZTBG | MOSFET P-CH 20V 3.5A 6-WDFN |
| NTLJS4114NT1G | MOSFET N-CH 30V 3.6A 6-WDFN |
| NTLJS4149PTBG | MOSFET P-CH 30V 4.6A SGL 6WDFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJS2103P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTLJS2103PTAG | 功能描述:MOSFET PFET WDFN6 12V 5.9A 0.025 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS2103PTBG | 功能描述:MOSFET PFET WDFN6 12V 5.9A 0.025 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS3113P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
| NTLJS3113P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
发布紧急采购，3分钟左右您将得到回复。