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| 型号： | NTLJD4150PTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 30V 3.2A 6WDFN |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 135 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJD4150P
Power MOSFET
?30 V, ?3.4 A, m Cool t Dual P?Channel,
2x2 mm WDFN Package
Features
? WDFN 2x2 mm Package Provides Exposed Drain Pad for
http://onsemi.com
?
?
?
?
Excellent Thermal Conduction
Footprint Same as SC?88 Package
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Bidirectional Current Flow with Common Source Configuration
This is a Pb?Free Device
V (BR)DSS
?30 V
R DS(on) Max
135 m W @ 10 V
200 m W @ 4.5 V
S1
I D Max (Note 1)
?3.4 A
S2
Applications
? Li?Ion Battery Charging and Protection Circuits
? LED Backlight, Flashlight
? Dual?High Side Load Switch
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G1
D1
G2
D2
Parameter
Symbol
Value
Unit
P?CHANNEL MOSFET
P?CHANNEL MOSFET
Drain?to?Source Voltage
Gate?to?Source Voltage
V DSS
V GS
?30
± 20
V
V
D2
D1
MARKING
DIAGRAM
G
Continuous Drain Current
(Note 1)
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
?2.7
?2.0
?3.4
A
Pin 1
WDFN6
CASE 506AN
1
2
3
JE M G 6
5
4
Power Dissipation
(Note 1)
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
I D
P D
1.5
2.3
?1.8
?1.4
0.7
W
A
W
JE = Specific Device Code
M = Date Code
G = Pb?Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J ,
?14
?55 to
A
° C
S1
1
D1
6
D1
T STG
150
Source Current (Body Diode) (Note 2)
I S
?1.8
A
G1
2
5
G2
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
D2
3
D2
4
S2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
(Top View)
ORDERING INFORMATION
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
Device
NTLJD4150PTBG
Package
WDFN6
(Pb?Free)
Shipping ?
3000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
? Semiconductor Components Industries, LLC, 2007
January, 2007 ? Rev. 0
1
Publication Order Number:
NTLJD4150P/D
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