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| 型号： | NTLJF4156NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.5A 6-WDFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 427pF @ 15V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTLJF4156NT1GOSCT |
NTLJF4156N
Power MOSFET and
Schottky Diode
30 V, 4.6 A, m Cool ] N?Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm
WDFN Package
http://onsemi.com
Features
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal
V (BR)DSS
MOSFET
R DS(on) MAX
I D MAX (Note 1)
?
?
?
?
?
Conduction
Co?Packaged MOSFET and Schottky For Easy Circuit Layout
R DS(on) Rated at Low V GS(on) Levels, V GS = 1.5 V
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Low V F Schottky
This is a Pb?Free Device
30 V
70 m W @ 4.5 V
90 m W @ 2.5 V
125 m W @ 1.8 V
250 m W @ 1.5 V
SCHOTTKY DIODE
4.6 A
Applications
? DC?DC Converters
? Li?Ion Battery Applications in Cell Phones, PDA’s, Media Players
? Color Display and Camera Flash Regulators
V R MAX
30 V
D
V F TYP
0.47 V
A
I F MAX
2.0 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain?to?Source Voltage
Symbol
V DSS
Value
30
Unit
V
G
Gate?to?Source Voltage
V GS
± 8.0
V
S
K
Continuous Drain
Current (Note 1)
Steady
State
T J = 25 ° C
T J = 85 ° C
I D
3.7
2.7
A
N?CHANNEL MOSFET
SCHOTTKY DIODE
MARKING
t ≤ 5s
T J = 25 ° C
4.6
DIAGRAM
G
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
T J = 25 ° C
P D
1.5
2.3
W
1
WDFN6
CASE 506AN
1 6
2 JLM G 5
3 4
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
I D
P D
2.5
1.8
0.71
A
JL = Specific Device Code
M = Date Code
G = Pb?Free Package
(Note: Microdot may be in either location)
Pulsed Drain Current
t p = 10 m s
I DM
20
A
PIN CONNECTIONS
Operating Junction and Storage Temperature
T J , T STG
?55 to
° C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
150
2.4
260
A
° C
A
N/C
1
2
K
6
5
K
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
D
3
D
4
S
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm 2 , 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 4
1
Publication Order Number:
NTLJF4156N/D
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| NTLJF4156NTAG | 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| NTLJS1102PTAG | 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS1102PTBG | 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS2103P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
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