- 您现在的位置：买卖IC网 > Datasheet目录490 > NTLJF4156NT1G (ON Semiconductor)MOSFET N-CH 30V 2.5A 6-WDFN Datasheet资料下载
参数资料
| 型号： | NTLJF4156NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.5A 6-WDFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 427pF @ 15V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTLJF4156NT1GOSCT |
NTLJF4156N
SCHOTTKY DIODE MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Parameter
Symbol
V RRM
V R
I F
Value
30
30
2.0
Unit
V
V
A
THERMAL RESISTANCE RATINGS
Parameter
Junction?to?Ambient – Steady State (Note 3)
Junction?to?Ambient – t ≤ 5 s (Note 3)
Junction?to?Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
83
54
180
Unit
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm 2 , 2 oz. Cu.
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, Ref to 25 ° C
30
18.1
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V DS = 24 V, V GS = 0 V
T J = 25 ° C
T J = 85 ° C
1.0
10
m A
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.4
0.7
1.0
V
Gate Threshold
V GS(TH) /T J
2.8
mV/ ° C
Temperature Coefficient
Drain?to?Source On?Resistance
R DS(on)
V GS = 4.5, I D = 2.0 A
47
70
m W
V GS = 2.5, I D = 2.0 A
V GS = 1.8, I D = 1.8 A
V GS = 1.5, I D = 1.5 A
56
88
133
90
125
250
Forward Transconductance
g FS
V DS = 10 V, I D = 2.0 A
4.5
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
427
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
51
32
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = 4.5 V, V DS = 15 V,
I D = 2.0 A
5.4
0.5
0.8
1.24
3.7
6.5
nC
W
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTLJS1102PTBG | MOSFET P-CH 8V 3.7A 6-WDFN |
| NTLJS2103PTAG | MOSFET P-CH 12V 3.5A 6-WDFN |
| NTLJS3113PTAG | MOSFET P-CH 20V 3.5A 6-WDFN |
| NTLJS3180PZTBG | MOSFET P-CH 20V 3.5A 6-WDFN |
| NTLJS4114NT1G | MOSFET N-CH 30V 3.6A 6-WDFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJF4156NTAG | 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS1102P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package |
| NTLJS1102PTAG | 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS1102PTBG | 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS2103P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
发布紧急采购，3分钟左右您将得到回复。