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| 型号： | NTLJD4150PTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 30V 3.2A 6WDFN |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 135 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJD4150P
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
SINGLE OPERATION (SELF?HEATED)
Junction?to?Ambient – Steady State (Note 3)
R q JA
83
Junction?to?Ambient – Steady State Min Pad (Note 4)
Junction?to?Ambient – t ≤ 5 s (Note 3)
R q JA
R q JA
177
54
° C/W
DUAL OPERATION (EQUALLY HEATED)
Junction?to?Ambient – Steady State (Note 3)
R q JA
58
Junction?to?Ambient – Steady State Min Pad (Note 3)
Junction?to?Ambient – t ≤ 5 s (Note 3)
R q JA
R q JA
133
40
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm 2 , 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ?250 m A
I D = ?250 m A, Ref to 25 ° C
?30.0
1.9
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V DS = ?24 V, V GS = 0 V
T J = 25 ° C
T J = 85 ° C
?1.0
?5.0
m A
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = ?250 m A
?1.0
?1.5
?2.0
V
Gate Threshold
V GS(TH) /T J
0.4
mV/ ° C
Temperature Coefficient
Drain?to?Source On?Resistance
Forward Transconductance
R DS(on)
g FS
V GS = ?10 V, I D = ?4.0 A
V GS = ?4.5 V, I D = ?3.0 A
V DS = ?10 V, I D = ?1.0 A
95
156
1.5
135
200
m W
m W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
300
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = ?15 V
50
30
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS =?4.5 V, V DS = ?15 V, I D = ?2.0 A
3.6
0.44
0.79
1.54
10.6
4.5
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Turn?On Delay Time
t d(ON)
7.0
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ?4.5 V, V DD = ?24 V,
I D = ?3.0 A, R G = 2 W
16.2
11.8
8.8
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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