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| 型号： | NTLJD3119CTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V 4.6/4.1A 6WDFN |
| 产品变化通告： | 1Q2012 Discontinuation 30/Mar/2012 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A，2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 3.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 271pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 标准包装 |
| 其它名称： | NTLJD3119CTAGOSDKR |
NTLJD3119C
Power MOSFET
20 V/ ? 20 V, 4.6 A/ ? 4.1 A, m Cool t
Complementary, 2x2 mm, WDFN Package
Features
? Complementary N ? Channel and P ? Channel MOSFET
? WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
? Footprint Same as SC ? 88 Package
? Leading Edge Trench Technology for Low On Resistance
? 1.8 V Gate Threshold Voltage
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? This is a Pb ? Free Device
Applications
? Synchronous DC ? DC Conversion Circuits
? Load/Power Management of Portable Devices like PDA’s, Cellular
Phones and Hard Drives
? Color Display and Camera Flash Regulators
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
N ? Channel
20 V
P ? Channel
? 20 V
D2
http://onsemi.com
R DS(on) MAX
65 m W @ 4.5 V
85 m W @ 2.5 V
120 m W @ 1.8 V
100 m W @ ? 4.5 V
135 m W @ ? 2.5 V
200 m W @ ? 1.8 V
D1
I D MAX
3.8 A
2.0 A
1.7 A
? 4.1 A
? 2.0 A
? 1.6 A
MARKING
DIAGRAM
Parameter
Drain ? to ? Source Voltage
N ? Ch
P ? Ch
Symbol
V DSS
Value
20
? 20
Unit
V
Pin 1
WDFN6
CASE 506AN
1 JMM G
G
6
1
Gate ? to ? Source Voltage
N ? Channel
Continuous Drain
Current (Note 1)
P ? Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
N ? Channel
Continuous Drain
Current (Note 2)
P ? Channel
Continuous Drain
Current (Note 2)
Steady
State
t ≤ 5s
Steady
State
t ≤ 5s
Steady
State
t ≤ 5s
Steady
State
Steady
State
N ? Ch
P ? Ch
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
V GS
I D
I D
P D
I D
I D
± 8.0
3.8
2.8
4.6
? 3.3
? 2.4
? 4.1
1.5
2.3
2.6
1.9
? 2.3
? 1.6
V
A
A
W
A
A
S1
G1
D2
JM = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
D1
2 5 G2
D2
3 4 S2
(Top View)
T A = 25 ° C
Power Dissipation Steady
(Note 2) State
Pulsed Drain Current N ? Ch t p = 10 m s
P ? Ch
Operating Junction and Storage Temperature
P D
I DM
T J , T STG
0.71
18
? 20
? 55 to
150
W
A
° C
ORDERING INFORMATION
Device Package Shipping ?
NTLJD3119CTAG WDFN6 3000/Tape & Reel
(Pb ? Free)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
NTLJD3119CTBG
WDFN6
(Pb ? Free)
3000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm 2 , 2 oz Cu.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
December, 2009 ? Rev. 4
1
Publication Order Number:
NTLJD3119C/D
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| NTLJD3119CTBG | 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJD3181PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package |
| NTLJD3181PZTAG | 功能描述:MOSFET 20V UCOOL DUAL P-CHN 4.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJD3181PZTBG | 功能描述:MOSFET 20V UCOOL DUAL P-CHN 4.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJD3182FZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool? Single P−Channel & Schottky Barrier Diode, ESD |
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