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| 型号： | NTLJD3183CZTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET COMPL 20V LOW PRO 6WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A，2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 355pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJD3183CZ
Power MOSFET
20 V/ ? 20 V, 4.7 A/ ? 4.0 A, m Cool t
Complementary, 2x2 mm, WDFN Package
Features
? WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
? Lowest R DS(on) in 2x2 mm Package
? Footprint Same as SC ? 88 Package
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? ESD Protected
? This is a Pb ? Free Device
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment
? Load Switch
? Level Shift Circuits
? DC ? DC Converters
V (BR)DSS
N ? Channel
20 V
P ? Channel
? 20 V
D2
http://onsemi.com
R DS(on) MAX
68 m W @ 4.5 V
86 m W @ 2.5 V
120 m W @ 1.8 V
100 m W @ ? 4.5 V
144 m W @ ? 2.5 V
200 m W @ ? 1.8 V
D1
I D MAX
4.7 A
4.2 A
3.5 A
? 4.0 A
? 3.3 A
? 2.8 A
MARKING
DIAGRAM
1 JNM G
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage V DSS
Value
20
Unit
V
Pin 1
WDFN6
CASE 506AN
2
3
6
5
4
Gate ? to ? Source Voltage
N ? Channel
Continuous Drain
Current (Note 1)
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
± 8.0
3.8
2.7
4.7
V
A
JN = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
P ? Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
N ? Channel
Continuous Drain
Current (Note 2)
P ? Channel
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
t ≤ 5s
Steady
State
t ≤ 5s
Steady
State
Steady
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
I D
I D
P D
? 3.2
? 2.3
? 4.0
1.5
2.3
2.6
1.9
? 2.2
? 1.6
0.71
A
W
A
A
W
S1
G1
D2
1
2
3
PIN CONNECTIONS
D1
6
5
D2
4
(Top View)
D1
G2
S2
Pulsed Drain Current
N ? Ch
t p = 10 m s
I DM
18
A
ORDERING INFORMATION
P ? Ch
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J , T STG
T L
? 16
? 55 to
150
260
° C
° C
Device
NTLJD3183CZTAG
NTLJD3183CZTBG
Package
WDFN6
(Pb ? Free)
WDFN6
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm 2 , 2 oz Cu.
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
December, 2008 ? Rev. 0
1
Publication Order Number:
NTLJD3183CZ/D
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| NTLJD3183CZTBG | 功能描述:MOSFET 20V 4.1A UCOOL CMPLM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| NTLJD4116N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
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| NTLJD4150P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package |
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