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| 型号： | NTLJS3180PZTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.5A 6-WDFN |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 38 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1100pF @ 16V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS3180PZ
Power MOSFET
? 20 V, ? 7.7 A, m Cool t Single P ? Channel,
ESD, 2x2 mm WDFN Package
Features
? WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
? Lowest R DS(on) Solution in 2x2 mm Package
? Footprint Same as SC ? 88 Package
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? ESD Protected
? This is a Pb ? Free Device
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment
? High Side Load Switch
? Battery Switch
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) MAX
38 m W @ ? 4.5 V
50 m W @ ? 2.5 V
75 m W @ ? 1.8 V
200 m W @ ? 1.5 V
S
G
D
P ? CHANNEL MOSFET
I D MAX
? 7.7 A
Steady
State
2 AAM G 5
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
T A = 25 ° C
T A = 85 ° C
Symbol
V DSS
V GS
I D
Value
? 20
± 8.0
? 5.9
? 4.2
Unit
V
V
A
S
Pin 1
D
WDFN6
CASE 506AP
MARKING
DIAGRAM
1 6
3 G 4
Power Dissipation
(Note 1)
t ≤ 5s
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 25 ° C
P D
? 7.7
1.9
3.3
W
AA = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
? 3.5
? 2.5
0.7
A
W
D
1
PIN CONNECTIONS
6
D
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
I DM
T J , T STG
I S
? 23
? 55 to
150
? 2.8
A
° C
A
D
G
2
3
5
4
D
S
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
(Top View)
3000/Tape & Reel
NTLJS3180PZTBG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm 2 , 2 oz Cu).
ORDERING INFORMATION
Device Package Shipping ?
NTLJS3180PZTAG WDFN6
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
December, 2008 ? Rev. 0
1
Publication Order Number:
NTLJS3180PZ/D
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| NTLJS3180PZTBG | 功能描述:MOSFET 20V UCOOL SNGL P-CH 7.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| NTLJS3A18PZTXG | 制造商:ON Semiconductor 功能描述:PFET WDFN6 20V 8.4A 18MOH - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET 2X2WDFN6 20V 18MOHM - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / PFET 2X2WDFN6 20V 18MOHM |
| NTLJS4114N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.8 A, uCool Single N−Channel, 2x2 mm WDFN Package |
| NTLJS4114NT1G | 功能描述:MOSFET NFET 2X2 30V 7.8A 33mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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