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参数资料
| 型号： | NTLUD3191PZTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1.7A DUAL 6UDFN |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 1.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.5nc @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 160pF @ 10V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN（1.6x1.6） |
| 包装： | 带卷 (TR) |
NTLUD3191PZ
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AT ? 01
ISSUE O
2X
0.10 C
PIN ONE
REFERENCE
D
A
B
E
L1
L
DETAIL A
OPTIONAL
CONSTRUCTION
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
MILLIMETERS
6X
2X
0.10 C
TOP VIEW
DETAIL B
0.05 C
0.05 C
SIDE VIEW
A1
(A3)
A
C
SEATING
PLANE
A1
EXPOSED Cu MOLD CMPD
A3
DETAIL B
OPTIONAL
CONSTRUCTION
DIM
A
A1
A3
b
D
E
e
D1
D2
E1
K
L
L1
MIN MAX
0.45 0.55
0.00 0.05
0.13 REF
0.20 0.30
1.60 BSC
1.60 BSC
0.50 BSC
1.14 1.34
0.38 0.58
0.54 0.74
0.20 ???
0.15 0.35
??? 0.10
DETAIL A
6X K
1
D1
3
2X
D2
E1
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
1.34
2X
0.58
6X
L
6 4
e
BOTTOM VIEW
6X
b
0.10 C A B
0.05 C NOTE 3
6X
0.48
0.74 1.90
1
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
m Cool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 Toll Free USA/Canada
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http://onsemi.com
6
ON Semiconductor Website : www.onsemi.com
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For additional information, please contact your local
Sales Representative
NTLUD3191PZ/D
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| NTLUD3191PZTBG | 功能描述:MOSFET PFET WDFN6 20V 1.7A 250mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLUD3A260PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET a??20 V, a??2.1 A,Cool Dual Pa??Channel, ESD, 1.6x1.6x0.55 mm UDFN Package |
| NTLUD3A260PZTAG | 功能描述:IGBT 晶体管 POWER MOSFET 20V 2A 200 M RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTLUD3A260PZTBG | 功能描述:IGBT 晶体管 POWER MOSFET 20V 2A 200 M RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTLUD3A50PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??20 V, a??5.6 A, Cool Dual Pa??Channel, 2.0x2.0x0.55 mm UDFN Package |
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