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| 型号： | NTMD6N02R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR N-CH DL 3.92A 20V 8SO |
| 产品变化通告： | Wire Change 20/Aug/2008 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.92A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1100pF @ 16V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMD6N02R2GOSDKR |
NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N?Channel Enhancement Mode
Dual SO?8 Package
http://onsemi.com
Features
?
?
?
?
?
?
?
?
Ultra Low R DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SOIC?8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SOIC?8 Mounting Information Provided
Pb?Free Package is Available
V DSS
20 V
R DS(ON) TYP
35 m W @ V GS = 4.5 V
N?Channel
D
G
I D MAX
6.0 A
Applications
? DC?DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery?Powered Products,
for example, Computers, Printers, Cellular and Cordless Telephones
and PCMCIA Cards
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
8
1
S
SOIC?8
CASE 751
STYLE 11
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
20
Unit
V
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain?to?Gate Voltage (R GS = 1.0 M W )
Gate?to?Source Voltage ? Continuous
Thermal Resistance,
Junction?to?Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
V DGR
V GS
R q JA
P D
I D
I D
20
" 12
62.5
2.0
6.5
5.5
V
V
° C/W
W
A
A
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
(Top View)
8
7
6
5
Drain 1
Drain 1
Drain 2
Drain 2
Pulsed Drain Current (Note 4)
I DM
50
A
Thermal Resistance,
Junction?to?Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
R q JA
P D
I D
I D
I DM
102
1.22
5.07
4.07
40
° C/W
W
A
A
A
E6N02 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
(Note: Microdot may be in either location)
Thermal Resistance
Junction?to?Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
R q JA
P D
I D
I D
I DM
172
0.73
3.92
3.14
30
° C/W
W
A
A
A
ORDERING INFORMATION
Device Package Shipping ?
NTMD6N02R2 SOIC?8 2500/Tape & Reel
1. Mounted onto a 2 in square FR?4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t < 10 seconds.
NTMD6N02R2G
SOIC?8
(Pb?Free)
2500/Tape & Reel
2. Mounted onto a 2 in square FR?4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t = steady state.
3. Minimum FR?4 or G?10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 3
1
Publication Order Number:
NTMD6N02R2/D
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