参数资料
型号: NTMS3P03R2
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET P-CH 30V 2.34A 8-SOIC
产品变化通告: Wire Change 20/Aug/2008
Product Discontinuation 20/Aug/2008
标准包装: 2,500
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 2.34A
开态Rds(最大)@ Id, Vgs @ 25° C: 85 毫欧 @ 3.05A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 25nC @ 10V
输入电容 (Ciss) @ Vds: 750pF @ 24V
功率 - 最大: 730mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: NTMS3P03R2OS
NTMS3P03R2
Power MOSFET
-3.05 Amps, -30 Volts
P-Channel SOIC-8
Features
http://onsemi.com
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High Efficiency Components in a Single SOIC-8 Package
High Density Power MOSFET with Low R DS(on)
Miniature SOIC-8 Surface Mount Package - Saves Board Space
Diode Exhibits High Speed with Soft Recovery
I DSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for the SOIC-8 Package is Provided
Pb-Free Package is Available
-3.05 AMPERES
-30 VOLTS
0.085 W @ V GS = -10 V
P-Channel
D
Applications
? DC-DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery-Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless
Telephones
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
8
1
8
D
D
D D
SOIC-8
CASE 751
STYLE 13
1
E3P03
AYWW G
G
NC S
S G
E3P03
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMS3P03R2
NTMS3P03R2G
Package
SOIC-8
SOIC-8
Shipping ?
2500/Tape & Reel
2500/Tape & Reel
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 3
1
Publication Order Number:
NTMS3P03R2/D
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