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参数资料
| 型号： | NTB75N03RT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 9.7A D2PAK |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1333pF @ 20V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
| 其它名称： | NTB75N03RT4OS |
NTB75N03R, NTP75N03R
Power MOSFET
75 Amps, 25 Volts
N?Channel D 2 PAK, TO?220
Features
? Planar HD3e Process for Fast Switching Performance
? Low R DS(on) to Minimize Conduction Loss
? Low C iss to Minimize Driver Loss
? Low Gate Charge
? Pb?Free Packages are Available
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
http://onsemi.com
75 AMPERES
25 VOLTS
R DS(on) = 5.6 m W (Typ)
4
Parameter
Symbol
Value
Unit
4
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
V DSS
V GS
25
± 20
V dc
V dc
1
2
3
Thermal Resistance ? Junction?to?Case
Total Power Dissipation @ T C = 25 ° C
Drain Current
? Continuous @ T C = 25 ° C
? Single Pulse (t p = 10 m s)
R q JC
P D
I D
I DM
1.68
74.4
75
225
° C/W
W
A
A
1
2
3
TO?220AB
CASE 221A
STYLE 5
D 2 PAK
CASE 418B
Thermal Resistance ? Junction?to?Ambient
(Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JA
P D
I D
60
2.08
12.6
° C/W
W
A
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Thermal Resistance ? Junction?to?Ambient
(Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
Operating and Storage Temperature Range
R q JA
P D
I D
T J , T stg
100
1.25
9.7
?55 to
° C/W
W
A
° C
4
Drain
4
Drain
150
75N03RG
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
E AS
71.7
mJ
P75N03RG
AYWW
AYWW
(V DD = 30 V dc , V GS = 10 V dc , I L = 12 A pk ,
L = 1 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
T L
260
° C
1
Gate
2
3
Source
1
Gate
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Drain
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in 2 ).
xxxxxxx
G
A
Y
WW
= Device Code
= Pb?Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 4
1
Publication Order Number:
NTB75N03R/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB75N03RT4G | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N06 | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N06G | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTB75N06L | 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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