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| 型号： | NTMS4917NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 10.2A SO8 FL |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 11A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1054pF @ 25V |
| 功率 - 最大： | 880mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMS4917N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
16
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 30 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.0
1.7
2.5
V
Negative Threshold Temperature
Coefficient
V GS(TH) /T J
5
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 11 A
8.25
11
m W
V GS = 4.5 V, I D = 9 A
11.25
15
Forward Transconductance
g FS
V DS = 1.5 V, I D = 7.5 A
19
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1054
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
325
165
Total Gate Charge
Q G(TOT)
15.6
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V, I D = 7.5 A
2.6
4.2
7
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V, I D = 7.5 A
29
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
8.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
6.3
27
12
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 2.0 A
T J = 25 ° C
T J = 125 ° C
0.75
0.58
1.0
V
Reverse Recovery Time
t RR
28
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 2.0 A
12.2
15.7
Reverse Recovery Charge
Q RR
20
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.66
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.2
1.5
Gate Resistance
R G
0.70
W
3. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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