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| 型号： | NTMS5835NLR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 9.2A 8SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2115pF @ 20V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMS5835NLR2GOSDKR |
NTMS5835NL
Power MOSFET
40 V, 12 A, 10 m W
Features
? Low R DS(on)
? Low Capacitance
? Optimized Gate Charge
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
http://onsemi.com
R DS(ON) MAX
I D MAX
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Gate ? to ? Source Voltage
V GS
Value
40
± 20
Unit
V
V
40 V
10 m W @ 10 V
14 m W @ 4.5 V
D
12 A
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
I D
P D
9.2
7.4
1.5
1.0
A
W
G
R q JA (Note 1)
Continuous Drain T A = 25 ° C
Current R q JA
(Note 1) T A = 70 ° C
t ≤ 10 s
Power Dissipation T A = 25 ° C
T A = 70 ° C
Pulsed Drain t p = 10 m s
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 40 V, V GS = 10 V,
L = 0.1 mH )
I D
P D
I DM
T J , T STG
I S
EAS
IAS
12
9.6
2.6
1.6
48
? 55 to
+150
20
69
37
A
W
A
° C
A
mJ
A
8
1
SO ? 8
CASE 751
STYLE 12
A
Y
S
N ? CHANNEL MOSFET
MARKING DIAGRAM/
PIN ASSIGNMENT
1 8
Source Drain
Source Drain
Source Drain
Gate Drain
Top View
= Assembly Location
= Year
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping ?
Junction ? to ? Ambient Steady State (Note 1)
R q JA
82
NTMS5835NLR2G
SO ? 8
(Pb ? Free)
2500/Tape & Reel
Junction ? to ? Ambient ? t ≤ 10 s (Note 1)
Junction ? to ? Foot (Drain) (Note 1)
Junction ? to ? Ambient Steady State (Note 2)
R q JA
R q JF
R q JA
49
21
121
° C/W
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface ? mounted on FR4 board using 1 sq ? in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface ? mounted on FR4 board using 0.155 in sq (100mm 2 ) pad size.
? Semiconductor Components Industries, LLC, 2011
April, 2011 ? Rev. 1
1
Publication Order Number:
NTMS5835NL/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS5838NL | 制造商:ON Semiconductor 功能描述:MOSFET N CH W DIO 40V 5.8A 8SO 制造商:ON Semiconductor 功能描述:MOSFET, N CH, W DIO, 40V, 5.8A, 8SO |
| NTMS5838NLR2G | 功能描述:MOSFET NFET SO8-S 40V 25mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS5P02R2 | 功能描述:MOSFET -20V -5.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS5P02R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -5.4 Amps， -20 Volts |
| NTMS5P02R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -5.4 Amps, -20 Volts |
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