参数资料
型号: NTMS7N03R2
厂商: ON Semiconductor
文件页数: 1/10页
文件大小: 0K
描述: MOSFET N-CH 30V 4.8A 8-SOIC
产品变化通告: Wire Change 20/Aug/2008
Product Discontinuation 20/Aug/2008
标准包装: 2,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 43nC @ 10V
输入电容 (Ciss) @ Vds: 1190pF @ 25V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: NTMS7N03R2OS
NTMS7N03R2
Power MOSFET
7 Amps, 30 Volts
N?Channel SOIC?8
Features
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Miniature SOIC?8 Surface Mount Package
? Avalanche Energy Specified
? I DSS Specified at Elevated Temperature
? Pb?Free Package is Available
Typical Applications
http://onsemi.com
7 AMPERES
30 VOLTS
R DS(on) = 23 m W
N?Channel
D
?
?
?
?
?
DC?DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD
in Many Applications
G
S
MARKING
DIAGRAM
8
8
1
SOIC?8
CASE 751
STYLE 13
E7N03
AYWW G
G
1
A = Assembly Location
Y = Year
WW = Work Week
G
= Pb?Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
N?C
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
June, 2005 ? Rev. 4
1
Publication Order Number:
NTMS7N03R2/D
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