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参数资料
| 型号： | NTMS7N03R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 4.8A 8-SOIC |
| 产品变化通告： | Wire Change 20/Aug/2008 Product Discontinuation 20/Aug/2008 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1190pF @ 25V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMS7N03R2OS |
NTMS7N03R2
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 1.0 M W )
Gate?to?Source Voltage ? Continuous
Thermal Resistance, Junction?to?Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Continuous @ T A = 70 ° C
Drain Current ? Pulsed (Note 4)
Thermal Resistance, Junction?to?Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Continuous @ T A = 70 ° C
Drain Current ? Pulsed (Note 4)
Thermal Resistance, Junction?to?Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Continuous @ T A = 70 ° C
Drain Current ? Pulsed (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche Energy ? Starting T J = 25 ° C
Symbol
V DSS
V DGR
V GS
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
E AS
Value
30
30
± 20
50
2.5
8.5
6.8
25
85
1.47
6.5
5.2
18
156
0.8
4.8
3.8
14
? 55 to +150
288
Unit
Vdc
Vdc
Vdc
° C/W
W
Adc
Apk
° C/W
W
Adc
Apk
° C/W
W
Adc
Apk
° C
mJ
(V DD = 30 Vdc, V GS = 10 Vdc, Peak
I L = 12 Apk, L = 4.0 mH, R G = 25 W )
1.
2.
3.
4.
2 in. Sq. FR?4 PCB mounting, (2 oz. Cu 0.06 in. thick single sided), 10 Sec. Max.
2 in. Sq. FR?4 PCB mounting, (2 oz. Cu 0.06 in. thick single sided), t = steady state.
Minimum FR4 or G10 PCB, t = steady state.
Pulse test: Pulse Width = 300 m s, Duty Cycle = 2%.
ATTRIBUTES
Characteristics
Value
ESD Protection
ORDERING INFORMATION
Device
NTMS7N03R2
NTMS7N03R2G
Human Body Model
Machine Model
Charged Device Model
Package
SOIC?8
SOIC?8
Class 1E
Class A
Class 0
Shipping ?
2500 / Tape & Reel
2500 / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS7N03R2_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 7 Amps, 30 Volts |
| NTMS7N03R2G | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD2P102LR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD2P102LR2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:FETKY? |
| NTMSD2P102LR2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NTMSD2P102LR2 |
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