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| 型号： | NTMSD3P102R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.34A 8-SOIC |
| 产品变化通告： | Product Discontinuation 04/April/2008 Wire Change 12/May/2009 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 3.05A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 16V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMSD3P102R2GOS |
NTMSD3P102R2
FETKY ?
P-Channel Enhancement-Mode
Power MOSFET and Schottky Diode
Dual SO-8 Package
Features
? High Efficiency Components in a Single SO-8 Package
? High Density Power MOSFET with Low R DS(on) ,
Schottky Diode with Low V F
? Independent Pin-Outs for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
? Less Component Placement for Board Space Savings
? SO-8 Surface Mount Package,
Mounting Information for SO-8 Package Provided
? Pb-Free Packages are Available
Applications
? DC-DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery-Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
http://onsemi.com
MOSFET
-3.05 AMPERES
-20 VOLTS
0.085 W @ V GS = -10 V
SCHOTTKY DIODE
1.0 AMPERE
20 VOLTS
470 mV @ I F = 1.0 A
1 8
A C
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted).
A
2
7
C
Rating
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Symbol
V DSS
V GS
Value
-20
" 20
Unit
V
V
S
G
3
4
6
5
D
D
Thermal Resistance -
Junction-to-Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance -
Junction-to-Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance -
Junction-to-Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
171
0.73
-2.34
-1.87
-8.0
100
1.25
-3.05
-2.44
-12
62.5
2.0
-3.86
-3.10
-15
- 55 to
° C/W
W
A
A
A
° C/W
W
A
A
A
° C/W
W
A
A
A
° C
8
1
SO-8
CASE 751
STYLE 18
E3P1
xx
A
Y
WW
G
(TOP VIEW)
MARKING DIAGRAM &
PIN ASSIGNMENT
C C D D
8
E3P1xx
AYWW G
G
1
A A S G
= Device Code
= 02 or S
= Assembly Location
= Year
= Work Week
= Pb-Free Package
+150
(Note: Microdot may be in either location)
Single Pulse Drain-to-Source Avalanche
Energy - Starting T J = 25 ° C
(V DD = -20 Vdc, V GS = -4.5 Vdc,
Peak I L = -7.5 Apk, L = 5 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
T L
140
260
mJ
° C
ORDERING INFORMATION
Device Package Shipping ?
NTMSD3P102R2 SO-8 2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NTMSD3P102R2G
NTMSD3P102R2SG
SO-8
(Pb-Free)
SO-8
2500/Tape & Reel
2500/Tape & Reel
1. Minimum FR-4 or G-10 PCB, Steady State.
2. Mounted onto a 2 ″ square FR-4 Board (1 in sq, 2 oz Cu 0.06 ″ thick
single-sided), Steady State.
3. Mounted onto a 2 ″ square FR-4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single
sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 3
1
Publication Order Number:
NTMSD3P102R2/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMSD3P102R2SG | 功能描述:MOSFET FETKY 20V .085R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD3P303 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTMSD3P303R2 | 功能描述:MOSFET -30V -3.05A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD3P303R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:FETKY? |
| NTMSD3P303R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
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