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| 型号： | NTMSD3P102R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.34A 8-SOIC |
| 产品变化通告： | Product Discontinuation 04/April/2008 Wire Change 12/May/2009 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 3.05A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 16V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMSD3P102R2GOS |
NTMSD3P102R2
SCHOTTKY MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Thermal Resistance - Junction-to-Ambient (Note 5)
Thermal Resistance - Junction-to-Ambient (Note 6)
Thermal Resistance - Junction-to-Ambient (Note 7)
Average Forward Current (Note 7)
(Rated V R , T A = 100 ° C)
Peak Repetitive Forward Current (Note 7)
(Rated V R , Square Wave, 20 kHz, T A = 105 ° C)
Non-Repetitive Peak Surge Current (Note 7)
Symbol
V RRM
V R
R q JA
R q JA
R q JA
I O
I FRM
I FSM
Value
20
204
122
83
1.0
2.0
20
Unit
V
° C/W
° C/W
° C/W
A
A
A
(Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60 Hz)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
5. Minimum FR-4 or G-10 PCB, Steady State.
6. Mounted onto a 2 ″ square FR-4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single-sided), Steady State.
7. Mounted onto a 2 ″ square FR-4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single sided), t ≤ 10 seconds.
SCHOTTKY ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (Note 8)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage
I F = 1.0 Adc
V F
T J = 25 ° C
T J = 125 ° C
Volts
I F = 2.0 Adc
Maximum Instantaneous Forward Voltage
I F = 1.0 Adc
V F
0.47
0.58
0.39
0.53
Volts
I F = 2.0 Adc
Maximum Instantaneous Reverse Current
V R = 20 Vdc
I R
T J = 25 ° C
0.05
T J = 125 ° C
10
mA
Maximum Voltage Rate of Change
V R = 20 Vdc
dV/dt
10,000
V/ m s
8. Indicates Pulse Test: Pulse Width = 300 m s max, Duty Cycle = 2%.
http://onsemi.com
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相关代理商/技术参数 |
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| NTMSD3P102R2SG | 功能描述:MOSFET FETKY 20V .085R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD3P303 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTMSD3P303R2 | 功能描述:MOSFET -30V -3.05A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD3P303R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:FETKY? |
| NTMSD3P303R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
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